简介:Si3N4/TiCnanocompositeceramicshavebeenfabricatedbyhotpressingtechniquewithAl2O3andY2O3asadditives.TheresultsshowedthatwelldispersedcompositepowderwascarriedoutbyaddingdispersantandadjustingpHvaluesofsuspensions.RemarkableincreaseinflexuralstrengthatroomtemperatureswasobtainedbyaddingnanoparticlesinSi3N4matrixwith10%(wtpct)ofnano-Si3N4and15%ofnano-TiC.Theflexuralstrength,fracturetoughnessandhardnesswere1025MPa,7.5MPa·1/2and15.6GPa,respectively.Themicrostructuresofmaterialswereanalyzedbyscanningelectronmicroscopy(SEM)andtransmissionelectronmicroscopy(TEM),whichindicatedthatTiCnanoparticlesdistributeinthematrixandatthegrainboundaries.Accordingtothefractureform,lowcontentsofnanoparticlescouldrefinematrixgrainsandleadtothecrackdeflectionaswellascrackpinning.Themultiplexmicrostructurewasformedbymixingnano-Si3N4particles.Thecracktrajectoriesexhibitedcrackdeflection,rod-likegrainbridgingandpull-out.
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简介:ThemagnesiabasedcurablespecimenswithdifferentSi3N4contentswerecastedusingsinteredmagnesite(w(MgO)=95%)asstartingmaterial,SiO2micro-powderasbinder,0.3%,4%and5%β-Si3N4powderreplacingtheequaladditionofmagnesiapowderrespectively.Theslagresistancetestwascarriedoutat1550℃for3husingBaosteeltundishslagandstaticcruciblemethod.Theresultindicatesthat:introducingSi3N4couldobviouslyimprovetheslagresistanceofMgObasedcastable,whichincreasedwithincreasingSi3N4.DenseSiO2sinteredlayerformedonthesurfaceofmagnesiabasedcastablebecauseoftheoxidationofSi3N4addition,whichcanpreventthefurtherslagpenetration.Inthedeepinnerofcastable,thepartial-pressureofoxygenwasverylow,soSi3N4canexiststably.Meanwhileinreducingatmosphere,Si3N4washardtobesintered,whichresultedinthelooseinteriorstructureofMgObasedcastable.
简介:Amorphoussilicon(a-Si),nanocrystallinesilicon(nc-Si)andhydrogenatednanocrys-tallinesilicon(nc-Si:H)filmswerefabricatedbyusingchemicalvapordeposition(CVD)system.Thea-Siandnc-Sithinfilmswereirradiatedwith94MeVXe-ionsatfluencesof1.0×1011ions/cm-2,1.0×1012ions/cm-2and1.0×1013ions/cm-2atroomtemperature(RT).Thenc-Si:Hfilmswereirradiatedwith9MeVXe-ionsat1.0×1012Xe/cm-2,1.0×1013Xe/cm-2and1.0×1014Xe/cm-2atRT.Forcomparison,mono-crystallinesilicon(c-Si)sampleswerealsoirradiatedatRTwith94MeVXe-ions.AllsampleswereanalyzedbyusinganUV/VIS/NIRspectrometerandanX-raypowderdiffractometer.Variationsoftheopticalband-gap(Eg)andgrainsize(D)versustheirradiationfluencewereinvestigatedsystematically.Theobtainedresultsshowedthattheopticalband-gapsandgrainsizeofthethinfilmschangeddramaticallywhereasnoobservablechangewasfoundinc-SisamplesafterXe-ionirradiation.Possiblemechanismunderlyingthemodificationofsiliconthinfilmswasbrieflydiscussed.
简介:Siliconnanoconearrayswithmetalsilicide(FeandCr)-enrichedapexesarefabricatedonSi(100)substratebytheAr+ionbombardmentmethod.Thenanoconearraysshowexcellentfieldemissionproperties.Ahighcurrentdensity(J)of~0.33mA/cm2underafieldof~3V/μm,averylowturn-onfieldof~1.4V/μm,andaverylargeenhancementfactorof~9466arealsoobtained.TheemissionJofSinanoconearraysremainsextremelystableforlongperiodsoftime(24h).
简介:Pure-Ge/Sishortperiodsuperlattice(SPS)grownbygassourceMBE(GSMBE)isstudiedbyphotoluminescencespectroscopyandRamanscatteringspectroscopy.AnabnormalbandinphotoluminescenceisfoundinanintermediaterangeofLsibetween1.9nm-2.9nmforsampleswithLgefixedat1.5ml.Incontrasttoapure-Ge/Siquantumwell,theenergyofthebandshowsred-shiftasLsiincreases.RamanscatteringshowsthatSi-SivibrationrelatedRamanshiftreachesaminimumforsampleswithstrongestPLintensityoftheabnormalband.Itisthereforeconcludedthattheabnormalbandisrelatedwithstrainrelaxationprocess.
简介:TherearetwotpyesofphasetransformationsinFe-MnandFe-Mn-Sialloyswhenthetemperatureisdecreased,γ(fcc)→ε(hcp)martensitictransformation(MT)andparamagnetic-antiferromagnetictransition(AMT)ofγphase.Fromthethermodynamicpointofview,theformerusuallyappearsinaslightlyhighertemperaturerangethanthelatterbecauseifisgenerallyacceptedthatthemagnetictansitionhasasuppressingeffectonthethermallyinducedεmartensite(Satoetal.,1984.,BogachevandZvigintzeva,1976;Murakamietal.,1987:Yangetal.,1992)GartsteinandRobinkin(1979)eventhoughtthattheγ-εtransformationshouldbeterminatedbelowNeeltemperature(TN)duetothedecreaseoffreeenergyarisingfromtheAMTofγphase.However,someexperimentalresultshaeindicatedtheformationofεphasebelowT(LiandWayman,1994:Fujimori.1966).Inthepresentwert.thebehavorofγ-εtransformationbelowTNwasfurtherinvestigatedbyclectricalresistancemeasurements.