简介:为了明确团聚现象及表面性质对ZnS纳米材料发光性质的影响,采用SiO2对ZnS材料进行了表面修饰,并对ZnS及ZnS/SiO2复合材料的光学性质进行对比研究。采用吸收光谱分析了包覆前后光吸收性质的差异,发现SiO2包覆后ZnS纳米材料的带边由333nm红移至360nm。为了研究ZnS纳米材料与ZnS/SiO2纳米复合材料的光发射性质,分别对含纳米材料的水溶液样品及粉末样品的发光光谱进行了采集。对比研究的结果表明,SiO2包覆后ZnS纳米材料在蓝紫光区的发光得到了明显增强。以氙灯作为激发光源所获得荧光光谱显示ZnS/SiO2粉末样品发光的积分强度增大为原来的17.5倍,但相同条件下针对溶液样品的测试结果显示其发光强度只增大了1.1倍,这种增强可用SiO2的存在抑制了ZnS纳米粒子间的团聚来解释,且这一推断由325nm紫外激光激发下获得的光致发光数据进行了验证。
简介:Inthiswork,MoOxpromotedIr/SiO2catalystswerepreparedandusedfortheselectivehydrogenolysisoftetrahydrofurfurylalcohol(THFA)to1,5-pentanediolinacontinuousflowreactor.Theeffectsofdifferentnoblemetals(Ir,Pt,Pd,Ru,Rh),supportsandIrcontentswerescreened.Amongtheinvestigatedcatalysts,4wt%Ir-MoOx/SiO2withaMo/Iratomicratioof0.13exhibitedthebestcatalyticperformance.ThesynergybetweenIrparticlesandthepartiallyreducedisolatedMoOxspeciesattachedonthemisessentialfortheexcellentcatalyticperformanceofIr-MoOx/SiO2.ThecatalystexhibitedabetterhydrogenolysisefficiencyofTHFAwiththeselectivityof1,5-pentanediolof65%–74%ataconversionofTHFAof70%–75%whentheinitialTHFAconcentrationisrangingfrom20wt%and40wt%.AndhighersystempressurewasalsoinfavoroftheconversionofTHFA.Duringastabilitytest,theconversionofTHFAand1,5-pentanediolyieldoverIr-MoOx/SiO2decreasedwithreactiontime,whichcanbeexplainedbytheleachingofMospeciesduringthereaction.
简介:<正>“Privacy”istranslatedasyinsiinChinese.Traditionally,intheChinesemind,yinsiisassociatedwithsomethingthatisclosedorunfair.Ifsomeoneissaidtohaveyinsi,meddlers(好事者)willbeattractedtopry(打探)intohisorheraffairs.Sopeoplealwaysstatethattheydon’thaveyinsi.
简介:TheinvestigationonopticalpropertiesofSi1-xGex/Sistrainedlayerstructureshasbeencarriedoutactivelyinrecentyears.Thephotoluminescencehasbe-comeabriskersubjectinthestudiesofitsvariousopticalproperties.Aresearchdevelop-menttophotoluminescencepropertiesofsomenewSi1-xGex/Sistrainedlayerstruc-turesisintroduced.
简介:Theresidualelectricallyactivedefectsin(4×1012cm-2(30KeV)+5×1012cm-2(130KeV))si-implantedLECundopedsi-GaAsactivatedbytwo-steprapidthermalannealing(RTA)LABELEDAS970℃(9S)+750℃(12S)havebeeninvestigatedwithdeepleveltransientspec-troscopy(DLTS).TwoelectrontrapsET1(Ec-0.53eV,σn=2.3×10-16cm2)andET2(Ec-0.81eV,σn=9.7×10(-13)cm2)aredetected.Furthermore,thenoticeablevariationsoftrap’scon-centrationandenergylevelintheforbiddengapwiththedepthprofileofdefectsinducedbyionim-plantationandRTAprocesshavealsobeenobserved.The[Asi·VAs·AsGa]and[VAs·Asi·VGa·AsGa]areproposedtobethepossibleatomicconfigurationsofET1andET2,respectivelytoexplaintheirRTAbehaviors.
简介:FEBRUARY,2016RegulationsConcerningMenstrualPainLeaveaStepintheRightDirectionWomeninAnhuiProvincecantake1-2daysoffwhensufferingmenstrualpainsolongastheyprovideamedicalcertificate,accordingtothelatestlaborregulationsestablishedbytheAnhuiprovincialgovernment.Anhuiisnottheonlyprovincetotakethisstance.Otherregions,suchasJiangsuProvinceandGuangdongProvince,arealso
简介:PhotoconductivityCharacteristicsofPorousSi①CHAOZhanyun,WANGKaiyuan(DepartmentofElectronicEnginering,SoutheastUniversity,Nanji...
简介:PitformationandsurfacemorphologicalevolutioninSi(001)homoepitaxyareinvestigatedbyusingscanningtunnelingmicroscopy.Anti-phaseboundaryisfoundtogiverisetoinitialgenerationofpitsboundbybunchedDBsteps.Theterracesbreakupandarereducedtoacriticalnucleussizewithpitformation.Duetoanisotropickinetics,adownhillbiasdiffusioncurrent,whichislargeralongthedimerrowsthroughthecentreareaoftheterracethanthroughtheareaclosetotheedge,leadstotheprevalenceofpitsboundby{101}facets.Subsequentannealingresultsinashapetransitionfrom{101}-facetedpitstomulti-facetedpits.
简介:研究Al-Mg-Si合金晶界组成相(Al-Mg2Si及Al-Mg2Si-Si)间的电化学行为和动态电化学耦合行为,提出Al-Mg-Si合金的晶间腐蚀机理。研究表明,晶界Si的电位比其边缘Al基体的正,在整个腐蚀过程中作为阴极导致其边缘Al基体的阳极溶解;晶界Mg2Si的电位比其边缘Al基体的负,在腐蚀初期作为阳极发生阳极溶解,然而由于Mg2Si中活性较高的元素Mg的优先溶解,不活泼元素Si的富集,致使Mg2Si电位正移,甚至与其边缘Al基体发生极性转换,导致其边缘Al基体的阳极溶解。当n(Mg)/n(Si)〈1.73时,随着腐蚀的进行,合金晶界同时会有Mg2Si析出相和Si粒子,腐蚀首先萌生于Mg2Si相和Si边缘的无沉淀带,而后,Si粒子一方面导致其边缘无沉淀带严重的阳极溶解,另一方面加速Mg2Si和晶界无沉淀带的极性转换,从而促使腐蚀沿晶界Si粒子及Mg2Si粒子边缘向无沉淀带发展。
简介:通过将CBERS-02/02B星数据应用于2008年汶川地震灾害监测,探讨了利用CBERS-02/02B星CCD和HR数据进行地震灾害应急监测的可行性和主要技术途径,为辅助政府部门进行防震救灾提供了决策依据。