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Stable field emission of ion-sputtering-induced Si nanocone arrays

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摘要 Siliconnanoconearrayswithmetalsilicide(FeandCr)-enrichedapexesarefabricatedonSi(100)substratebytheAr+ionbombardmentmethod.Thenanoconearraysshowexcellentfieldemissionproperties.Ahighcurrentdensity(J)of～0.33mA/cm2underafieldof～3V/μm,averylowturn-onfieldof～1.4V/μm,andaverylargeenhancementfactorof～9466arealsoobtained.TheemissionJofSinanoconearraysremainsextremelystableforlongperiodsoftime(24h).

DOI 2d3g0xxm49/1295243

作者薛绍林;吴淑贤;邱迎;陆明

机构地区不详

出处《中国光学快报：英文版》 2013年11期

关键词金属硅化物场发射性能阵列纳米离子溅射稳定

分类 [机械工程][光学工程]

出版日期 2013年11月21日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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来源期刊

中国光学快报：英文版

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金属硅化物场发射性能阵列纳米离子溅射稳定

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