简介：MOCVD是一种生长或外延薄膜的技术。将光引入外延过程，利用光的量子性，使反应的物理和化学过程得到促进，进而发展了一种新的化合物半导体薄膜制备技术，即光诱导MOCVD技术。本文综合分析了该技术的基本原理、实验装置、光源的分类和选择及该技术的实践应用，介绍了反应室结构的开发设计及光源的新进展。

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简介：WhenweuseMOCVDtechnique,anexcellentCdTeepi-layerwasgrownonGaAssubstratesandtheCdTe/GaAshybridsubstratessuitableforgrowingHg1-xCdxTe（CMT）wereobtained.ThexvalueinCMTisbetween0.2and0.8.TheelectricalpropertiesofCMTdependuponthethicknessofCdTeepi-layers.TheCdTe/GaAsinterfacewasexaminedbybothscanningelectronmicroscope（SEM）andelectronaugerspectra（EAS）.TheinfluenceofdefectsobservedatinterfaceonelectricalandopticalpropertiesofCMTfihnswasdis-cussed.

简介：客栈和In0.46Ga0.54N电影在蓝宝石上被种与一轧了缓冲区bymetalorganic化学药品蒸汽免职(MOCVD)。两高分辨率X光衍射和高分辨率传播电子显微镜学结果表明这些电影有单个水晶的六角形的结构。薄客栈电影有475厘米(2)的高活动性V(-1)s(-1)和In0.46Ga0.54N的是163厘米(2)V(-1)s(-1)。InNfilm的房间温度光致发光测量在0.72eV显示出一座山峰，证实一部高质量的客栈电影为到完整的光谱房间的应用被制作。

简介：High-strainInGaAs/GaAsquantumwells(QWs)aregrownbylow-pressuremetal-organicchemicalvapordeposition(LP-MOCVD).Photoluminescence(PL)atroomtemperatureisappliedforevaluationoftheopticalproperty.Theinfluenceofgrowthtemperature,V/IIIratio,andgrowthrateonPLcharacteristicareinvestigated.ItisfoundthatthegrowthtemperatureandV/IIIratiohavestrongeffectsonthepeakwavelengthandPLintensity.Thefull-widthathalf-maximum(FWHM)ofPLpeakincreaseswithhighergrowthrateofInGaAslayer.TheFWHMofthePLpeaklocatedat1039nmis20.1meV,whichgrowsat600°CwithV/IIIratioof42.7andgrowthrateof0.96mm/h.

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简介：GaxIn1-xAs1-ySbyalloyshavebeengrownbyatmosphericpressureMOCVDonn-GaSb（Te-doped）substrate.Thesohdcompositionwasdeterminedbyusingelectronmicroprobe.ThealloysofGalnAsSbwithcompositioninmiscibilitygapweresuccessfullygrown.TheopticalpropertiesofGaxIn1-xAs1-ySbylaverswerecharacterizedbythephotoluminescenceandtheinfraredabsorption.Thespectralresponsesofp+-GaInAsSb/p-GaxIn1-xAs1-ySby/n-GaSbdetectorsshowedwavelengthcutoffat2.4μmanddetectivity-D*=5×108cmHz1/2/Watroomtemperature.

简介：Zinctinoxide(ZTO)thinfilms,withzincacetateandtributyltinchlorideasrawmaterials,weredepositedonglasssubstratesbythemethodofmetalorganicchemicalvapordeposition(MOCVD).Thecrystallization,microstructureandopticalpropertieswereinvestigatedbyscanningelectronicmicroscope(SEM),X-raydiffraction(XRD)andultraviolet-visible(UV-Vis)spectrophotometer.TheresultsshowthatwiththeincreaseinSn/Znratio,thecrystalchangesfromwurtzitetorutilephase.Whentheratioreaches11:18,theintensityofZn_2SnO_4peaksappearstobethestrongestandtheopticalbandgapisabout3.27eV.Calculatedbytheenvelopemethod,thethicknessoftheZTOthinfilmsis713.24nm.MeasuredbyUV-Visspectrophotometer,thetransmittanceoftheZTOthinfilmsreachesupto80%inthewavelengthrangeof400-1000nmwhentheSn/Znratiois7:18.

简介：有为由感应的加热的一个垂直metalorganic化学药品蒸汽免职反应堆的一条戒指隧道的susceptor结构被建议。因此，热传导的方向由隧道被改变，并且隧道在susceptor做热再分配。在这susceptor的热转移的模式也被分析。另外，在susceptor的隧道的地点和尺寸用有限元素方法被优化。比较在之间优化并且常规susceptor表演优化susceptor不仅在晶片提高加热效率而且温度分发的一致性，它贡献改进电影生长的质量。[从作者抽象]

简介：Theprogramprocessofthelongitudinalimpurityprofileintroducedinthequantumwell(QW)laserandmicrowaveelectronicmaterialsinanalysed,basedonthegrowthsystembymetalorganicchemicalvapordeposition(MOCVD)andmicrowaveelectronicmaterialsandchloridevaporphaseepitaxy(VPE).Thequantitativesolutionofthefinallongitudinaldirectionimpuritydistributionusingthemathematicalphysicsmodelofimpuritycarrier-gastransportdriftandrediffusioningrowthprocesswascarriedout.Atechnologyforgivingareferencetogrownimputityprofileofabruptdopinganduniformlongitudinaldirectionbasedonthetheoryispresented.

简介：TheMOCVDgrowthofmodifiedAlAs/GaAsdoublebarrierresonanttunnelingdiodes(DBRTD)withanA1GaAschairwasreported.Theresonancestothefirstexcitedstateswereobtained.Thepeak-to-valleycur-rentratio(PVCR)is1.3at77K,roomtemperaturepeakcurrentdensityis8kA/cm~2.Theresonancevoltagesareinagreementwiththetheoreticalapproachbytransfer-matrixmethod.Influenceofinterruptedgrowthtimeatthehetero-interfaceandincorporationoftheAlGaAschairtothedeviceperformanceswerestudiedandthemechanismwasdiscussed.TheattempttoaddanAlGaAschairtotheDBRTDbyMOCVDresultedinimprovementinthePVCRandpeakcurrentdensity.

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简介：我们在场一个样品栅栏的整体的集成散布了布拉格有由联合的一个量井electroabsorption调节的人(QW电动会计记帐机)的反射镜(SG-DBR)激光极端低压(55mbar)selective-area-growth(下垂)金属器官的化学蒸汽免职(MOCVD)和使混合的量井(QWI)第一次。QW电动会计记帐机和获得节能被使用同时种下垂MOCVD技术。同时，QWI技术提供在二功能的节之间的一个突然的乐队差距变化，它减少内部吸收损失。试验性的结果证明阀值电流Ith=62妈，和产量功率到达3.6mW。调节范围封面30nm的波长，和所有相应方面模式抑制比率是超过30dB。在可得到的波长隧道的扑灭比率能与-5V的偏爱到达超过14dB。[从作者抽象]