Modified AlAs/GaAs Double Barrier Quantum Resonant Tunneling Diodes Grown by AP-MOCVD-中国期刊网

摘要 TheMOCVDgrowthofmodifiedAlAs/GaAsdoublebarrierresonanttunnelingdiodes(DBRTD)withanA1GaAschairwasreported.Theresonancestothefirstexcitedstateswereobtained.Thepeak-to-valleycur-rentratio(PVCR)is1.3at77K,roomtemperaturepeakcurrentdensityis8kA/cm~2.Theresonancevoltagesareinagreementwiththetheoreticalapproachbytransfer-matrixmethod.Influenceofinterruptedgrowthtimeatthehetero-interfaceandincorporationoftheAlGaAschairtothedeviceperformanceswerestudiedandthemechanismwasdiscussed.TheattempttoaddanAlGaAschairtotheDBRTDbyMOCVDresultedinimprovementinthePVCRandpeakcurrentdensity.

1谷雷;李林;乔忠良;孔令沂;苑汇帛;刘洋;戴银;薄报学;刘国军. High-strain InGaAs/GaAs quantum well grown by MOCVD.光学工程,2014-10.
2YANChang－ling;ZHONGJing－chang;等. P—type AlAs／[GaAs／AlAs]Semiconductor／Superlattice DBR Grown by MBE.物理电子学,2001-01.
3丁永庆;彭瑞伍;陈记安;杨臣华;陈美霓. Preparation and Interface Studies on HgCdTe/CdTe/GaAs Grown by MOCVD.金属材料,1992-02.
4郑卫民;李素梅;丛伟艳;王爱芳;李斌;黄海北. Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well.物理,2016-04.
5Y. Yao;T. Ochiai;T. Mano;T. Kuroda;T. Noda;N. Koguchi;K. Sakoda. Electronic structure of GaAs/A1GaAs quantum double rings in lateral electric field.光学工程,2009-10.
6MENGYA LIAO;SIMING CHEN;ZHIXIN LIU;YI WANG;LALITHA PONNAMPALAM;ZICHUAN ZHOU;JIANG WU;MINGCHU TANG;SAMUEL SHUTTS;ZIZHUO LIU;PETER M.SMOWTON;SIYUAN YU;ALWYN SEEDS;HUIYUN LIU. Low-noise 1.3μm InAs/GaAs quantum dot laser monolithically grown on silicon.物理,2018-11.
7杨晓红;韩勤;倪海桥;黄社松;杜云;彭红玲;熊永华;牛智川;吴荣汉. Design and Fabrication of 1.06μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells.物理,2006-12.
8郭洪菊;汪丽春;钮月萍;金石琦;龚尚庆. Tunneling-induced π-phase shift with a single-photon signal field in asymmetric double quantum wells.光学工程,2009-10.
9朱学亮;郭丽伟;于乃森;彭铭曾;颜建锋;葛炳辉;贾海强;陈弘;周均铭. Characteristics of High In-Content InGaN Alloys Grown by MOCVD.物理,2006-12.
10Ayham SHAER;Mohammad K. ELSAID;Musa ELHASAN. Magnetization of GaAs Parabolic Quantum Dot by Variation Method.物理,2016-02.

Modified AlAs/GaAs Double Barrier Quantum Resonant Tunneling Diodes Grown by AP-MOCVD

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Modified AlAs/GaAs Double Barrier Quantum Resonant Tunneling Diodes Grown by AP-MOCVD

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