简介：WhenweuseMOCVDtechnique,anexcellentCdTeepi-layerwasgrownonGaAssubstratesandtheCdTe/GaAshybridsubstratessuitableforgrowingHg1-xCdxTe（CMT）wereobtained.ThexvalueinCMTisbetween0.2and0.8.TheelectricalpropertiesofCMTdependuponthethicknessofCdTeepi-layers.TheCdTe/GaAsinterfacewasexaminedbybothscanningelectronmicroscope（SEM）andelectronaugerspectra（EAS）.TheinfluenceofdefectsobservedatinterfaceonelectricalandopticalpropertiesofCMTfihnswasdis-cussed.

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简介：WepresentedasimpleroutetopreparenanoscaleCdTeurchinsinatri-n-octylphosphineoxide(TOPO)system.CdTeurchinsconsistedofacoreandseveralattachedarms.Thearmswereca.3nmwide,andtheirlengthscouldbecontrolledwiththereactiontime.TheauthorsinvestigatedtheopticalabsorptionandstructuralpropertiesofthepreparedCdTe.ThelengthsofthearmscouldbetunedintoCdTenanourchins,whichledtoachangeinthephotophysicalpropertiesofthenanoscaleCdTeurchins.Theresults,includingtransmissionelectronmicroscopy(TEM)andabsorptionspectra,indicatedthatmesoporoussilicaandaminopropyltriethoxysilane(APTES)contributedtotheformationofnanoscaleCdTeurchins.

简介：战略分析指出，手机市场仍然是GaAs器件工业的主要驱动力，2003年北美的公司是其主导者。

简介：ZnTe/ZnTe∶Culayerisusedasacomplexbackcontact.TheparametersofCdTesolarcellswithandwithoutthecomplexbackcontactsarecompared.Theeffectsofun-dopedlayerthickness,dopedconcentrationandpost-depositionannealingtemperatureofthecomplexlayeronsolarcellsperformanceareinvestigated.TheresultsshowthatZnTe/ZnTe∶CulayercanimprovebackcontactsandlargelyincreasetheconversionefficiencyofCdTesolarcells.Un-dopedlayerandpost-depositionannealingofhightemperaturecanincreaseopenvoltage.Usingthecomplexbackcontact,asmallCdTecellwithfillfactorof73.14%andconversionefficiencyof12.93%isobtained.

简介：CdTefilmsarepreparedbyclosed-spacesublimationtechnology.Dependenceoffilmcrystallineonsubstratematerialsandsubstratetemperatureisinvestigated.Itisfoundthatfilmsexhibithighercrystallinityatsubstratetemperaturehigherthan400℃.AndtheCdTefilmsdepositedonCdSfilmswithhighercrystallinityhavebiggercrystalliteandhigheruniformity.TreatmentwithCdCl2methanolsolutionpromotesthecrystallitegrowthofCdTefilmsduringannealing.

简介：摘要：以3-巯基丙酸为配体，进行了CdTe量子点的调控制备。结果表明，通过改变反应时间，可以在540 nm到770 nm范围内调控量子点的荧光发射光谱；制备时间短，结果重现性好，荧光量子产率最高可达49.42%。

简介：Athree-dimensionalmodelofGaAs/A1GaAsquantumdoubleringsinthelateralstaticelectricfieldisinvestigatedtheoretically.Theeigenvalueproblemwiththeeffective-massapproximationissolvedbymeansofthefinite-elementmethod.Theenergylevelsandwavefunctionsofquantum-confinedelectronsandheavyholesareobtainedandshowanagreementwithourprevioustheoreticalandexperimentalstudies.ItisshownintheapproximationofneglectingtheCoulombattractionbetweentheelectronandheavyholethatarelativelylargeStarkshiftofexcitonemissionof4meVisattainablewithanappliedelectricfieldof0.7kV/cm.

简介：Thioglycolicacid(TGA)-stabilizedCdTenanocrystals(NCs)werepreparedwithsodiumtelluriteastelluriumsource,whichavoidsthecumbersomeprocessesassociatedwithH2TeorNaHTesources.FluorescentCdTe/SiO2compositesweresynthesizedbyasol-gelmethodwithouttheexchangeofsurfaceligands.ThephasestructureofCdTeNCswasinvestigatedbyX-raydiffractometry.Forcomparison,somecharacterizationsweredoneforboththeCdTeNCsandthecomposites.CdTeNCsandCdTe/SiO2compositeswerecharacterizedwithTEM,digitalcameraandfluorescencespectrophotometer.ThestabilityofCdTeNCsandthecompositeswereinvestigatedinphosphate-bufferedsaline(PBS)bufferandthefluorescentpropertiesofthecompositeswerediscussedindetail.

简介：关于全球半绝缘(SI)GaAs晶片市场“SIGaAs衬底市场：2003～2008”预测：该市场到2008年将增长54％。2002～2003年间的增长率为43％。日本和北美仍然是体晶片的主要生产者，2003年占整个市场的43％，该地区2003年SIGaAs晶片市场(外卖和自用)增加33％。亚太地区的市场增长最快，但主要以代工模式运营以便为GaAs半导体工业的发展打下基础。

简介：ThereolutioncharacteristicofGaAs/GaAlAstrransmissionphotocathodeisanimportantparameterinthirdgenerationintensifiers.ThemodulationtransferfunctionofGaAs/GaAlAstransmissionphotocathodeisderivedfromasimpletwo-dimensionaldiffusionequation.Thetheoreticalresolutioncharacteristicofa2μmthickGaAs/GaAlAstransmissionphotocathodeiscalculated.TherelationshipbetweenresolutionandparametersinGaAs/GaAlAstransmissionphotocathodeisdiscussed.AconclusionisshownthatonecandesigntheGaAs/GaAlAstransmissionphotocathodeformaximumquantumefficiency,sincethesacrificeintheresolutiondoesn'tlimitsystemperformances.

简介：Todealwiththeincreasinglydeterioratingenvironmentproblems,moreandmoreharshrequirementsareputforwardforphotocatalysisapplication.Buildingsemiconductorheterostructureshasbeenproventobeanefficientwaytoenhancephotocatalyticperformance.AkindofCdTe/ZnOheterostructuresweresynthesizedbyahydrothermalandsuccessiveioniclayerabsorptionandreaction(SILAR)methodandachievedobviouslyefficientphotocatalyticperformance.Moreover,aftertheNionirradiationtreatment,thephotocatalyticactivitywasfurtherenhanced,whichcanbeascribedtotheintroductionofoxygenvacancydefects.ThephotocatalyticperformanceenhancementmechanismbycouplingconstructingheterostructuresandIonirradiationarefurtherstudiedtogiveusanoverallunderstandingonZnOnanowires.

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简介：InGaAsP/GaAsSCHSQWlaershavebeenpreparedbyLPMOCVD.Thedependenceofthresholdcurrentdensityoncavitylengthwasexplained.Laserdiodesarecharacterizedbytheoutputpowerof1W20W,thresholdcurrentdensity(Jth)of330A/cm^2to450A/cm^2andexternaldifferentialquantumefficiency(ηd)of35%to75%,andthesecharacteristicsareingoodagreementwiththedesignedrequirement.

简介：因为stabilizer是被看到的，新奇水溶性的做Mn的CdTe/ZnS核心壳量的合成点使用一个建议超声的助理方法和3-mercaptopropionic酸(MPA)。获得高光的紧张，包括pH价值，反应温度，倒流时间和空气，preparative以后处理被调查了。为做Mn的CdTe/ZnS的优秀荧光，最佳的条件是pH11，倒流温度100慣?慰慲敭整獲漠?敫潴??戠瑯?湩瘠捡潵愠摮愠畱潥獵猠汯瑵潩吗？

简介：Weinvestigatethenonlinearresponseofterahertz(THz)metamaterialperfectabsorbersconsistingofelectricsplitringresonatorsonGaAsintegratedwithapolyimidespacerandgoldgroundplane.Theseperfectabsorbersonbulksemi-insulatingGaAsarecharacterizedusinghigh-fieldTHztime-domainspectroscopy.Theresonancefrequencyredshifts20GHzandtheabsorbanceisreducedby30%astheincidentpeakfieldisincreasedfrom30to300kV/cm.ThenonlinearresponsearisesfromTHzfielddriveninterbandtransitionsandintervalleyscatteringintheGaAs.ToeliminatetheFresnellossesfromtheGaAssubstrate,wedesignandfabricateaflexiblemetamaterialsaturableperfectabsorber.Theabilitytocreatenonlinearabsorbersenablesappealingapplicationssuchasopticallimitingandself-focusing.

简介：据参加微波技术与工艺研讨会（MTT-S）的一个专家讨论小组，RFCMOS可能还未迎来黄金时段，至少是在手机功率放大器领域，而砷化镓（GaAs）将继续在该领域处于主导地位。诺基亚的RF工程与技术经理FazalAli估计．2004年手机出货量约为6．645亿部，每部电话中有两或三个放大器，总计接近20亿个。他问这些功率放大器（PA）中有多少是CMOS，显然暗示答案是“不太多”。

简介：利用4.5MeV的氪离子（Kr^17＋）辐照（100）晶向本征未掺杂和高掺锌（P型）、（100）和（110）混合晶向的高掺硅（N型）砷化镓（GaAs）半导体材料,辐照注量为1×10^12～3×10^14cm^-2,测试辐照后材料的拉曼光谱。随着辐照注量增大,材料的纵向光学（longitudinaloptical,LO）声子峰向低频方向移动,出现了明显的非对称展宽,并且N型样品辐照后,晶体结构损伤要大于P型与本征未掺杂样品。3种类型样品的LO峰频移随辐照损伤的变化趋势一致,研究表明,掺杂元素不影响材料本身的晶体结构,可能是因为混合晶向的生长方式导致辐照后N型GaAs结构稳定性变差。

简介：<正>现场工作标准在对财务报表形成意见之前,审计人员必须能确认它们的恰当性。现场工作标准为审计人员提供了判断财务报表质量的依据。以下分别简述这三条现场工作标准并进行全面的讨论。

简介：Zinchasbeendiffusedinton-typeInxGa1-xAs,InPandGaAsinclosedam-poules,andtheexperimentaldataforInxGa1-xAsrarelyreportedpreviouslyhavebeenob-tained,TheoreticallythelinearrelationsipbetweenlogarithmicdiffusioncoefficientlnDandthecompositionxhasbeendemonstrated,whichisingoodagreementwiththeexperimentalresults.ThecalculateddiffusionjunctiondepthforInGaAsbasedonthediffusionmodelinwhichD^∝c^2isassumedalsoagreeswellwiththatoftheexperment,Finallytheoveralldiffusiontimeinamultiayerheterostructurewasapproximatedast=(∑√-ti）^2.