简介:Weproposedynamicterahertz(THz)emissionmicroscopy(DTEM)tovisualizetemporal–spatialdynamicsofphotoexcitedcarriersinelectronicmaterials.DTEMutilizesTHzpulsesemittedfromasamplebyprobepulsesirradiatedafterpumppulseirradiationtoperformtime-resolvedtwo-dimensionalmappingoftheTHzpulseemission,reflectingvariouscarrierdynamics.Usingthismicroscopy,weinvestigatedcarrierdynamicsinthegapregionoflow-temperature-grownGaAsandsemi-insulatingGaAsphotoconductiveswitchesoftheidentical-dipoletype.TheobservedDTEMimagesarewellexplainedbythechangeintheelectricpotentialdistributionbetweentheelectrodescausedbythescreeningeffectofthephotoexcitedelectron-holepairs.
简介:TheMOCVDgrowthofmodifiedAlAs/GaAsdoublebarrierresonanttunnelingdiodes(DBRTD)withanA1GaAschairwasreported.Theresonancestothefirstexcitedstateswereobtained.Thepeak-to-valleycur-rentratio(PVCR)is1.3at77K,roomtemperaturepeakcurrentdensityis8kA/cm~2.Theresonancevoltagesareinagreementwiththetheoreticalapproachbytransfer-matrixmethod.Influenceofinterruptedgrowthtimeatthehetero-interfaceandincorporationoftheAlGaAschairtothedeviceperformanceswerestudiedandthemechanismwasdiscussed.TheattempttoaddanAlGaAschairtotheDBRTDbyMOCVDresultedinimprovementinthePVCRandpeakcurrentdensity.
简介:OpticalsimulationsofGaAs/AlGaAsthin-filmwaveguideswereperformedforinvestigatingthedependenceofthemodalbehavioronwaveguidegeometryandtheresultinganalyticalsensitivity.Simulationswereperformedfortwodistinctmid-infraredwavelengths,therebydemonstratingthenecessityofindividuallydesignedwaveguidestructuresforeachspectralregimeofinterest.Hence,themodalbehavior,sensitivity,andintensityoftheevanescentfieldwereinvestigatedviamodelingstudiesat1600and1000cm-1,therebyconfirmingtheutilityofsuchsimulationsfordesigningmid-infraredsensorsbasedonthin-filmwaveguidetechnology.
简介:Usingasimpletwo-parameterwavefunction,wecalculatevariationallythebindingenergyofpositivelyandnegativelychargedexcitonsinGaAs/AlxGa1-xAsquantumwellsforwellwidthsfrom10to300A.Weconsidertheeffectofeffectivemass,dielectricconstantmismatchinthetwomaterials,andthewholecorrelationamongtheparticles.Theresultsarediscussedandcomparedindetailwithpreviousexperimentalandtheoreticalresults,whichshowfairagreementwiththem.
简介:Wereportlow-noise,high-performancesingletransversemode1.3μmInAs/GaAsquantumdotlasersmonolithicallygrownonsilicon(Si)usingmolecularbeamepitaxy.Thefabricatednarrow-ridge-waveguideFabry–Perot(FP)lasershaveachievedaroom-temperaturecontinuous-wave(CW)thresholdcurrentof12.5mAandhighCWtemperaturetoleranceupto90°C.Anultra-lowrelativeintensitynoiseoflessthan-150dB∕Hzismeasuredinthe4–16GHzrange.Usingthislow-noiseSi-basedlaser,wethendemonstrate25.6Gb/sdatatransmissionover13.5kmSMF-28.Theselow-costFPlaserdevicesarepromisingcandidatestoprovidecost-effectivesolutionsforuseinuncooledSiphotonicstransmittersininter/hyperdatacentersandmetropolitandatalinks.