简介:WehavestudiedtheinterfacialstructuresofAlN/Si(111)grownbymetal-organicchemicalvapourdeposition.X-rayphotoelectronspectroscopyandAngerelectronspectroscopywereusedtoanalysethecomponentsandchemicalstructuresofAlN/Si(111).Theresultsindicatedthatamix-crystaltransitionregion,approximately12nm,waspresentbetweentheAlNfilmandtheSisubstrateanditwascomposedofAlNandSi3N4.AfteranalysiswefoundthattheexistenceofSi3N4couldnotbeavoidedintheAlN/Si(111)interfacebecauseofstrongdiffusionat1070℃.EveninAlNlayerSi-Nbonds,Si-Sibondscanbefound.
简介:采用金属有机化学气相沉积法在Si(111)衬底上生长了AlN外延层。高分辨透射电子显微镜显示在AlN/Si界面处存在非晶层,俄歇电子能谱测试表明Si有很强的扩散,拉曼光谱测试表明存在Si-N键,另外光电子能谱分析表明非晶层中存在Si3N4。研究认为MOCVD高温生长造成Si的大量扩散是非晶层存在的主要原因,同时非晶Si3N4层也将促使AlN层呈岛状生长。
简介:TostudytheadsorptionbehaviorofCu+inaqueoussolutiononsemiconductorsurface,theinteractionsofCu+andhydratedCu+cationswiththecleanSi(111)surfacewereinvestigatedviahybriddensityfunctionaltheory(B3LYP)andMller-Plessetsecond-orderperturbation(MP2)method.ThecleanSi(111)surfacewasdescribedwithclustermodels(Si14H17,Si16H20andSi22H21)andafour-siliconlayerslabunderperiodicboundaryconditions.CalculationresultsindicatethatthebondingnatureofadsorptionofCu+onSisurfacecanbeviewedaspartialcova-lentaswellasionicbonding.ThebindingenergiesbetweenhydratedCu+cationsandSi(111)surfacearelarge,suggestingastronginteractionbetweenthem.ThecoordinationnumberofCu+(H2O)nonSi(111)surfacewasfoundtobe4.Asthenumberofwatermoleculesislargerthan5,watermoleculesformahydrogenbondnetwork.Inaqueoussolution,Cu+cationswillsafelyattachtothecleanSi(111)surface.
简介:Intrinsiccarrierconcentration(ni)isoneofthemostimportantphysicalparametersforunderstandingthephysicsofstrainedSiandSi1-xGexmaterialsaswellasforevaluatingtheelectricalpropertiesofSi-basedstraineddevices.Uptonow,thereportonquantitativeresultsofintrinsiccarrierconcentrationinstrainedSiandSi1-xGexmaterialshasbeenstilllacking.Inthispaper,byanalyzingthebandstructureofstrainedSiandSi1-xGexmaterials,boththeeffectivedensitiesofthestatenearthetopofvalencebandandthebottomofconductionband(NcandNv)at218,330and393KandtheintrinsiccarrierconcentrationrelatedtoGefraction(x)at300KweresystematicallystudiedwithintheframeworkofKPtheoryandsemiconductorphysics.ItisfoundthattheintrinsiccarrierconcentrationinstrainedSi(001)andSi1-xGex(001)and(101)materialsat300KincreasessignificantlywithincreasingGefraction(x),whichprovidesvaluablereferencestounderstandtheSibasedstraineddevicephysicsanddesign.
简介:WepresentthetemperaturedependentelectricaltransportmeasurementsofAg/Si(111)-(√3×√3)R30°bytheinsitumicro-four-pointprobemethodintegratedwithscanningtunnelingmicroscopy.Thesurfacestructurecharacterizationsshowhexagonalpatternsatroomtemperature,whichsupportstheinequivalenttriangle(IET)model.Ametal-insulatortransitionoccursat-115K.Thelowtemperaturetransportmeasurementsclearlyrevealthestronglocalizationcharacteristicsoftheinsulatingphase.
简介:AmassofGaNnanowireshasbeensuccessfullysynthesizedonSi(111)substratesbymagnetronsputteringthroughammoniatingGa2O3/Cofilmsat950C.X-raydiffraction,scanningelectronmicroscopy,highresolutiontransmissionelectronmicroscopeandFouriertransformedinfraredspectraareusedtocharacterizethesamples.Theresultsdemonstratethatthenanowiresareofsingle-crystalGaNwithahexagonalwurtzitestructureandpossessrelativelysmoothsurfaces.ThegrowthmechanismofGaNnanowiresisalsodiscussed.更多还原
简介:TheangledependenceofopticalphononmodesofanAlNbulksinglecrystalfromthem-plane(1100)andc-plane(0001)surfaces,respectively,isinvestigatedbypolarizedRamanspectroscopyinabackscatteringconfigurationatroomtemperature.CorrespondingRamanselectionrulesarederivedaccordingtomeasuredscatteringgeometriestoillustratetheangledependence.Theangle-dependentintensitiesofphononmodesarediscussedandcomparedtotheoreticalscatteringintensities,yieldingtheRamantensorelementsofA1(TO),E22,E1(TO),andA1(LO)phononmodesandtherelativephasedifferencebetweenthetwocomplexelementsofA1(TO).Furthermore,theRamantensorofwurtziteAlNiscomparedwiththatofwurtziteZnOreportedinpreviouswork,revealingtheintrinsicdifferencesoflatticevibrationdynamicsbetweenAlNandZnO.