简介:Inthispaper,polycrystallinesiliconfilmsweredepositedbyelectroncyclotronresonanceplasma-enhancedchemicalvapordeposition(ECR-PECVD)usingSiH_4/ArandSiH_4/H_2gaseousmixture.EffectsofargonflowrateonthedepositionefficiencyandthefilmpropertywereinvestigatedbycomparingwithH_2.TheresultsindicatedthatthedepositionrateofusingArasdischargegaswas1.5-2timeshigherthanthatofusingH_2,whilethepreferredorientationsandthegrainsizesofthefilmswereanalogous.FilmcrystallinityincreasedwiththeincreaseofArflowrate.OptimizedflowratioofSiH_4toArwasobtainedasF(SiH_4):F(Ar)=10:70forthehighestdepositionrate.
简介:ThethermodynamicphasestabilityareadiagramsofBCl3-NH3-SiCl4-H2-ArsystemwereplottedviaFactsagesoftwaretopredictthekineticexperimentalresults.Theeffectsofparameters(ie,partialpressureofreactants,depositiontemperatureandtotalpressure)onthedistributionregionsofsolidphaseproductswereanalyzedbasedonthediagrams.Theresultsshowthat:(a)Solidphaseproductsaremainlyaffectedbydepositiontemperature.TheareaofBN+Si3N4phaseincreaseswiththetemperaturerisingfrom650to900℃,anddecreaseswiththetemperaturerisingfrom900to1200℃;(b)Whentemperatureandtotalpressureareconstants,BN+Si3N4phaseexistsatahighpartialpressureofNH3;(c)Theeffectoftotalsystempressureiscorrelatedtodepositiontemperature.Thetemperaturerangingfrom700to900℃underlowtotalpressureistheoptimumconditionforthedeposition.(d)Appropriatekineticparameterscanbedeterminedbasedontheresultsofthermodynamiccalculation.Si–B–Ncoatingisobtainedvialowpressurechemicalvapordeposition.TheanalysisbyX-rayphotoelectronspectroscopyindicatesthatB–NandSi–Narethemainchemicalbondsofthecoating.
简介:ZrC涂层被低压力在石墨底层上扔有Br的化学蒸汽免职(LPCVD)2-Zr-C3H6-H2-Ar系统。微观结构和ZrC涂层的生长行为上的免职时间的效果被调查。ZrC涂层在一个岛层模式成长了。涂层的形成被ZrC的成核统治在起始20分钟,和快速的成核产生了ZrC的有细密纹理的结构涂层。免职时间什么时候在30min上,涂层的生长被统治由晶体,给安排列的结构。精力散X光检查光谱学证明到锆的碳的臼齿的比率在在ZrC涂层,和X光检查的1:1附近显示出的光电子光谱学ZrC是在涂层的主要阶段,由大约2.5mol%伴随了ZrO2次要的阶段。