Analysis of the Vertical and Lateral Interactions in a Multisheet Array of InAs/GaAs Quantum Dots-中国期刊网

摘要 TheverticalandlateralinteractionsinamultisheetarrayofInAs/GaAsquantumdotsareanalyzedbyfiniteelementmethod(FEM).Itisshownthatduetotheeffectsofverticalinteraction,nucleationpreferstohappenaboveburiedquantumdots(QDs).Meanwhile,theeffectsoflateralinteractionadjustthespacingoflateralneighboringQDs.TheverticalcouplingbecomesstrongwithdeceasingGaAsspacerheightandincreasingnumberofburiedlayers,whilethelateralcouplingbecomesstrongwithincreasingInAswettinglayerthickness.Thephenomenonthat,aftersuccessivelayers,thespacingandsizeofQDsislandsbecomeprogressivelymoreuniformisexplainedaccordingtotheminimumpotentialenergytheory.

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Analysis of the Vertical and Lateral Interactions in a Multisheet Array of InAs/GaAs Quantum Dots

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Analysis of the Vertical and Lateral Interactions in a Multisheet Array of InAs/GaAs Quantum Dots

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