简介：Aservocontrolsystemispronetolowspeedandunsteadinessduringvery-low-frequencyfollow-up.Adesignmethodoffeedforwardcontrolbasedonintelligentcontrollerisputfoward.Simulationandtestresultsshowthatthemethodhasexcellentcontrolcharacteristicsandstrongrobustness,whichmeetstheservocontrolneedswithvery-lowfrequency.

简介：Inthispaper,theconceptoftheShortest-RouteTrafficMatrix(SRTM)wasfirstpresented,andthegeneralizedformulaforcomputingringcapacityrequirementinuseofSRTMisgiven.Then,anewcapacitydesignalgorithmwhichisbasedonSRTMwaspresentedforSynchronousDigitalHierarchical(SDH)Bi-directionalSelf-HealingRing(BSHR).ThealgorithmsimulationresultsdemonstratethatthisalgorithmisveryefficientforSDHBSHRcapacitydesignandcanmakelessprojectinvestmentandmakehighutilizationoflinesandequipment.Bymeansofthealgorithminthispaper,capacityoptimizationassignmentforSDHHierarchicalSelf-HealingRing(HSHR)andforATMVirtualPath(VP)-basedSelf-HealingRing(SHR)isalsodiscussed.

简介：AnewSOI(SiliconOnInsulator)highvoltagedevicewithStepUnmovableSurfaceCharges(SUSC)ofburiedoxidelayeranditsanalyticalbreakdownmodelareproposedinthepaper.Theunmovablechargesareimplementedintotheuppersurfaceofburiedoxidelayertoincreasetheverticalelectricfieldanduniformthelateralone.The2-DPoisson'sequationissolvedtodemonstratethemodulationeffectoftheimmobileinterfacechargesandanalyzetheelectricfieldandbreakdownvoltagewiththevariousgeometricparametersandstepnumbers.AnewRESURF(REduceSURfaceField)conditionoftheSOIdeviceconsideringtheinterfacechargesandburiedoxideisderivedtomaximizebreakdownvoltage.Theanalyticalresultsareingoodagreementwiththenumericalanalysisobtainedbythe2-DsemiconductordevicessimulatorMEDICI.Asaresult,an1200Vbreakdownvoltageisfirstlyobtainedin3μm-thicktopSilayer,2μm-thickburiedoxidelayerand70μum-lengthdriftregionusingalineardopingprofileofunmovableburiedoxidecharges.

简介：Forenhancingthe2.0μmbandfluorescenceofHo3+,acertainamountofWO3oxidewasintroducedintoHo3+/Tm3+/Yb3+tri-dopedtelluriteglasspreparedusingmelt-quenchingtechnique.Thepreparedtri-dopedtelluriteglasswascharacterizedbytheabsorptionspectra,fluorescenceemissionandRamanscatteringspectra,togetherwiththestimulatedabsorption,emissioncross-sectionsandgaincoefficient.TheresearchresultsshowthattheintroductionofWO3oxidecanfurtherimprovethe2.0μmbandfluorescenceemissionthroughtheenhancedphonon-assistedenergytransfersbetweenHo3+/Tm3+/Yb3+ionsundertheexcitationof980nmlaserdiode（LD）.Meanwhile,themaximumgaincoefficientofHo3+at2.0μmbandreachesabout2.36cm-1.Anintense2.0μmfluorescenceemissioncanberealized.