简介：Wedemonstrateasilicon-basedmicrowavephotonicfilter(MPF)withflattoppassbandandadjustablebandwidth.TheproposedMPFisrealizedbyusinga10th-ordermicroringresonator(MRR)andaphotodetector,bothofwhichareintegratedonaphotonicchip.Thefullwidthathalf-maximum(FWHM)bandwidthoftheopticalfilterachievedatthedropportofthe10th-orderMRRis21.6GHz.Therippleofthepassbandislessthan0.3dB,whiletherejectionratiois32dB.Byadjustingthedeviationoftheopticalcarrierwavelengthfromthecenterwavelengthoftheopticalbandpassfilter,thebandwidthoftheMPFcanbegreatlychanged.Intheexperiment,theFWHMbandwidthoftheproposedMPFistunedfrom5.3to19.5GHz,andtherejectionratioishigherthan30dB.

简介：AsimplephotoelasticopticalmodulatorwithaFabry-Perotcavitybasedonthesilicon-on-insulatorsystemwasfabricated.A50%modulationdepthhasbeenobtatinedatcurrentdensityofabout1.5×10^3A/cm^2.Theinsertionlosswasabout15dB.

简介：Wepresentintegrated-opticbuildingblocksandfunctionalphotonicdevicesbasedonamorphoussiliconon-insulatortechnology.Efficientdeep-etchedfiber-to-chipgratingcouplers,low-losssingle-modephotonicwirewaveguides,andcompactpowersplittersarepresented.Basedonthesub-μmphotonicwires,2×2Mach–Zehnderinterferometersandadd/dropmicroringresonators(MRRs)withlowdevicefootprintsandhighfinesseupto200wererealizedandstudied.Compactpolarizationrotatorsandsplitterswith≥10dBpolarizationextinctionratiowerefabricatedforthepolarizationmanagementon-chip.Thetuningandtrimmingcapabilitiesofthematerialplatformaredemonstratedwithefficientmicroheatersandapermanentdevicetrimmingmethod,whichenabledtherealizationofenergy-efficientphotoniccircuits.Wavelengthmultiplexersintheformofcascadedfilterbanksand4×4routersbasedonMRRswitchesarepresented.Fabricationimperfectionswereanalyzedandpermanentlycorrectedbyanaccuratelaser-trimmingmethod,thusenablingeight-channelmultiplexerswithrecordlowmetricsofsub-mWstaticpowerconsumptionand≤1°Ctemperatureoverhead.Thehighqualityofthefunctionaldevices,thehightuningefficiency,andtheexcellenttrimmingcapabilitiesdemonstratethepotentialtorealizelow-cost,denselyintegrated,andultralow-power3D-stackedphotoniccircuitsontopofCMOSmicroelectronics.

简介：Inordertorealizetheplanargradientrefractiveindex(GRIN)microlenswhichisbaseduponporoussilicon(PSi)andfabricatedonsilicononinsulator(SOI),anovelanodizationmethodisusedbyapplyinglateralelectricfield.Themicrolenswithsmoothvariationoftheeffectiveopticalthicknessisachieved.Thelensistransparentintheinfraredregion,includingtheopticalcommunicationwindow(1.3μm

简介：Inthispaper,wepresentsimulationresultsofanelectroopticalvariableopticalattenuator(VOA)inte-gratedinsilicon-on-insulatorwaveguide.Thedeviceisfunctionallybasedonfreecarriersabsorptiontoachieveattenuation.Beampropagationmethod(BPM)andtwo-dimensionalsemiconductordevicesimu-lationtoolPISCES-Ⅱwereusedtoanalyzethedcandtransientcharacteristicsofthedevice.Thedevicehasaresponsetime(includingrisetimeandfalltime)lessthan200ns,muchfasterthanthethermoopticandmicro-electromechanicalsystems(MEMSs)basedVOAs.

简介：Thesilicon-on-insulator(SOI)1×2Y-junctionopticalwaveguideswitchhasbeenproposedandfabricated,whichisbasedonthelargecross-sectionsingle-moderibwaveguidecondition,thewaveguide-vanishingeffectandthefree-carrierplasmadispersioneffect.Intheswitch,theSOItechniqueutilizersiliconandsilicondioxidethermalbondingandback-polishing.Theinsertionlossandextinctionratioofthedevicearemeasuredtobelessthan4.78dBand20.8dBrespectivelyatawavelengthof1.3μmandaninjectioncurrentof45mA.Responsetimeisabout160ns.

简介：我们基于silicon-on-insulator(SOI)表明photonic水晶异种波导平板，连续地由二组成与邻近波导的空气洞的不同半径连接了减少宽度的photonic水晶波导。我们理论上证明结构的传播窗户对应于对波导和它普通的传播范围在到在二波导之间的差异的反的比例。另外，指导模式的组速度能被改变从对高度或高度到低低，取决于哪个结构移植信号是输入从就在一样，设备，和变化与在二波导之间的差异成正比。用这新奇结构，我们同时认识到传播窗户和指导模式的组速度的灵活控制。

简介：PolysiliconMicroelectromechanicalsystems(MEMS)arethesubjectofintensiveresearches.SurfacechemistryandtopographyofaMEMSteststructurefabricatedatSandiaNationalLaboratory,USA,werestudiedbymeansofscanningelectronmicroscopy(SEM),X-rayphotoelectronspectroscopy(XPS)andatomicforcemicroscopy(AFM).XPSC()andSi2,spectrafromthepolysilieoncomponents,siliconnitridesubstrateandareferencesiliconwaferwerecompared.Theresultsconfirmthepresenceofaself-assembledmonolayer(SAM)ontheMEMSsurface.Anisland-likemorphologywasfoundonbothpolysiliconandsiliconnitridesurfacesoftheMEMS.Theislandstaketheformofcaps,beingupto0.5μmindiameterand20nminheight.Itisconcludedthattheco-existenceofcolumnargrowthandequiaxedgrowthduringthelowpressurechemicalvapordeposition(LPCVD)oftheselayersleadstotheobservedmorphologyandtheislandsarecapstothecolumnarstructures.

简介：多孔的硅是用热氧化和silanization的functionalized。HYSA抗体在这篇论文被使不能调动到多孔的表面。当BSA被纳入PS表面时，在思考光谱和光致发光光谱的变化被调查。结果证明PS的光山峰消失。在抗原抗体反应以后，更高轻的排放被观察并且也，红转移的思考光谱。因此，这研究为敏感没有标签的光免疫传感器的发展打一个基础。

简介：Weproposeanddemonstrateanultrasensitiveintegratedphotoniccurrentsensorthatincorporatesasiliconbasedsingle-mode-multimode-single-modewaveguide(SMSW)structure.ThiskindofSMSWstructureisplacedoveradirectcurrentcarryingpowerresistor,whichproducesJoule’sheattochangethetemperatureoftheSMSWandfurtherresultsinthechangeoftheeffectiverefractiveindexbetweendifferentpropagatingmodes.Interferenceoccurswhenthemodesrecombineatthesecondsinglemodewaveguide.Finally,thecurrentvariationismeasuredbymonitoringtheshiftintheoutputspectrumofthemultimodeinterferometer.Inlowcurrent,thewavelengthshifthasalmostlineardependence:Δλ∝Ic.Thiseffectcanbeusedasacurrentsensorwithaslopeefficiencyof4.24nm/Aintherangeof0–200mA.

简介：TheelectricalnonlinearityofsiliconmodulatorsbasedonreversedPNjunctionswasfoundtoseverelylimitthelinearityofthemodulators.Thiseffect,however,wasinadvertentlyneglectedinpreviousstudies.Consideringtheelectricalnonlinearityinsimulation,a32.2dBdegradationintheCDR3(i.e.,thesuppressionratiobetweenthefundamentalsignalandintermodulationdistortion)ofthemodulatorwasobservedatamodulationspeedof12GHz,andthespuriousfreedynamicrangewassimultaneouslydegradedby17.4dB.ItwasalsofoundthatthelinearityofthesiliconmodulatorcouldbeimprovedbyreducingtheseriesresistanceofthePNjunction.Thefrequencydependenceofthelinearityduetotheelectricalnonlinearitywasalsoinvestigated.

简介：可重排的非阻塞的silicon-on-insulator-basedthermo眼有点尺寸变换器(SSC)和一个新开车电路的4脳4开关矩阵被设计并且制作。一个点尺寸变换器(SSC)的介绍减少了到不到10dB和新开车电路的插入损失改进了反应速度到不到1渭s。国家关键Basic部分地支持的CLC数字TN305中国在下面的研究专辑基础资助没有。G2000-03-66，和国家高技术不到资助号码60336010在资助号码2002AA312060，和中国的国家自然科学基础下面中国编程序。

简介：Ｓｉｌｉｃｏｎ－ｏｎ－ｉｎｓｕｌａｔｏｒ１×２Ｙ－ｊｕｎｃｔｉｏｎＯｐｔｉｃａｌＳｗｉｔｃｈＢａｓｅｄｏｎＷａｖｅｇｕｉｄｅ－ｖａｎｉｓｈｉｎｇＥｆｅｃｔ①②ＺＨＡＯＣｅｚｈｏｕ（Ｍｉｃｒｏｅｌｅｃｔｒｏｎ．Ｉｎｓｔｉｔｕｔｅ，ＸｉｄｉａｎＵｎｉｖｅ...

简介：ANewmethod,namedatmosphericpressureplasmapolishing,fortheultra-smoothmachiningofthesiliconbasedmaterialsisintroduced.ByinputtingtheCF4gasintotheatmosphericpressureplasmaflame,highdensityreactiveradicalswillbegenerated,whichwillthenreactwiththesiliconbasedmaterials.ThereactionproductisthevaporizationoftheSiF4,whichcanbeeasilyprocessed.Inthisway,theatomicscalematerialremovalcanberealizedandthedefectfreeultra-smoothsurfacecanbeobtained.Anexperimentalsetupisbuiltup,andtheSiCpolishingexperimentiscarriedout.TheAFMtestresultshowsthatthefinishedsurfaceroughness(Ra)canbeimprovedfrom4.529nmto0.926nmin3minutes.

简介：

简介：Aplasmonicrefractiveindexsensorbasedonmetal-insulator-metal(MIM)waveguide-coupledstructureisproposedanddemonstratedinthispaper.Thephysicalmechanismofthedeviceisdeduced,andthefinitedifferencetimedomain(FDTD)methodisemployedtosimulateandstudyitsindexsensingcharacteristics.Bothanalyticandsimulatedresultsshowthattheresonantwavelengthofthesensorhasalinearrelationshipwiththerefractiveindexofmaterialundersensing.Basedontherelationship,therefractiveindexofthematerialcanbeobtainedfromthedetectionoftheresonantwavelength.Theresultsshowthatthesensitivityofthesensorcanexceed1600nm/RIU,anditcanbeusedinchemicalandbiologicaldetections.

简介：photoluminescence(PL)lromone-dimensionalphotonicbandstructuresisinvestigated.Thedopedphotoniccrystalwithmicrocavitlesarefabricatedbyusingalternatinghydrogenatedamorphoussiliconnitride(a-SiNx:H/a-SiNy:H)layersinaplasmaenhancedchemicalvapourdeposition(PECVD)chamber.ItisobservedthatmicrocavitiesstronglymodifythePLspectrafromactivehydrogenatedamorphoussiliconnitride(a-SiNx:H)thinfilm.Bycomparison,thewideemissionbandwidth208nmisstronglynarrowedto11nm,andtheresonantenhancementofthepeakPLintensityisabouttwoordersofmagnitudewithrespecttotheemissionoftheλ/2-thicklayerofa-SiNx:H.AlinewidthofΔλ=11nmandaqualityfactorofQ=69areachievedinourone-dimensionala-SiNzphotoniccrystalmicrocavities.Measurementsoftransmittancespectraoftheas-grownsamplesshowthatthetransmittanceresonantpeakofacavitymodeat710nmisintroducedintothebandgapofone-dimensionalphotoniccrystaldistributedBraggreflector(DBR),whichfurtherverifiesthemicrocavityeffects.

简介：

简介：Wereportedonthegenerationofthedual-wavelengthrectangularpulseinanerbium-dopedfiberlaser(EDFL)withatopologicalinsulatorsaturableabsorber.Therectangularpulsecouldbestablyinitiatedwithpulsewidthfrom13.62to25.16nsandfundamentalrepetitionrateof3.54MHzbyproperlyadjustingthepumppowerandthepolarizationstate.Inaddition,weverifiedthatthepulseshapeofthedual-wavelengthrectangularpulsecanbeaffectedbythetotalnetcavitydispersioninthefiberlaser.Furthermore,byproperlyrotatingthepolarizationcontrollers,theharmonicmode-lockingoperationofthedual-wavelengthrectangularpulsewasalsoobtained.Thedual-wavelengthrectangularpulseEDFLwouldbenefitsomepotentialapplications,suchasspectroscopy,biomedicine,andsensingresearch.

简介：All-opticalintegratorsarekeydevicesfortherealizationofultra-fastpassivephotonicnetworks,and,despitetheirbroadapplicabilityrange(e.g.,photonicbitcounting,opticalmemoryunits,analoguecomputing,etc.),theirrealizationinanintegratedformisstillachallenge.Inthiswork,anall-opticalintegratorbasedonasiliconphotonicphase-shiftedBragggratingisproposedandexperimentallydemonstrated,whichshowsawideoperationbandwidthof750GHzandintegrationtimewindowof9ps.Theintegraloperationforsinglepulse,inphasepulses,andπ-shiftedpulseswithdifferentdelayshasbeensuccessfullyachieved.