简介:本研究以6个月巨桉无性系GL1苗木为试验材料,外源施加赤霉素到巨桉茎部,通过组织化学分析其对木质部发育的影响。外施GA3浓度在1.0-10.0mg/L时能够显著促进桉树茎的伸长,外施1.0mg/LGA3时,新生木质部中纤维细胞数量显著增加,而纤维细胞的直径没有变化,组织化学分析表明木质部细胞的增加主要是通过细胞分裂增加纤维细胞数量的方式,新生木质部导管分子数量和直径并没有显著增加。同时GA3处理会引起新生木质部中S-木质素和G-木质素含量降低,且GA3并不能显著促进巨桉新生木质部细胞中纤维细胞和导管分子的伸长。这些研究说明赤霉素通过调控细胞的分裂和次生细胞壁成分的合成来调控巨桉次生木质部发育。
简介:GA3与GA4+7采用2种不同浓度,在花前10d、1d和盛花期对巨峰(Kyoho)葡萄进行无核处理,花后10d用GA,和CPPU以三种浓度组配进行膨大处理。各处理都使巨峰葡萄的无核率大幅度提高。GA3处理比GA4+7处理更有利于巨峰葡萄产生无核果。在GA3的处理中花前1d处理对其产生的无核效应明显大于花前10d和盛花期的处理,以花前1dGA,12.5mgL^-1+盛花后10dGA312.5mgL^-1效果最好,其无核率可达90.91%。GA4+7对提高巨峰葡萄的座果效果比较显著,以花前1dGA,25mgL^-1+盛花期GA325mgL^-1+CPPU20mgL^-1效果比较好,座果为对照的123.1%。在巨峰葡萄上,用GA3进行处理的果实有变长的趋势;而用GA4+7进行处理的则有果实变圆的趋势。膨大处理时,配施CPPU比单用GA3效果要好。
简介:有5-8nm的尺寸的做Eu的GaOOHnanoparticles被热水的方法作为表面活化剂用钠dodecylbenzenesulfonate(SDBS)准备。做Eu的-Ga2O3和-Ga2O3被退火进一步制作GaOOH:Eu然后由X光检查衍射(XRD)描绘了,传播电子显微镜学(TEM)和光致发光(PL)。TEM结果显示出那monodisperse做Eu3+的GaOOHnanoparticles形式然后变换进通过退火的做Eu3+的-Ga2O3和-Ga2O3GaOOH:在600和900点的Eunanoparticles?????????????????@
简介:Nitridatedβ-Ga_2O_3(100)substratewasinvestigatedasthesubstrateforGaNepitaxialgrowth.Theeffectsofnitridationtemperatureandsurfaceroughnessofβ-Ga_2O_3wafersontheformationofGaNwerestudied.Itwasfoundthatthemostoptimizednitridationtemperaturewas900°C,andhexagonalGaNwithpreferredorientationwasproducedonthewell-polishedwafer.Thenitridationmechanismwasalsodiscussed.
简介:Wereportthestudyofalowtemperatureclusterglassstatein5%Mn-dopedUGa3heavyfermioncompound.Thiscompoundtransformsfromaparamagneticstatetoaspin-clusterglassstate,whichisconfirmedbymeasuringthedcsusceptibilityandmagnetization.Theacsusceptibilityexhibitsafrequency-dependentpeakaroundTf,whichprovidesdirectevidenceoftheclusterglassstate.Byanalyzingthefield-dependentmagnetizationandfrequency-dependentacsusceptibilityindetail,wededucethatthiscompoundformsaspin-clusterglassstatebelowTf.
简介:摘要:作为一种新兴的超宽带隙半导体,氧化镓(Ga2O3)受到了广泛的关注。高质量的块状晶体和薄膜是结构、电学和光学特性的基础研究和进一步器件制造的起点,为了实现高性能的Ga2O3基器件,必须通过控制载流子密度、缺陷密度和界面密度来制备高质量的Ga2O3薄膜和单晶。在本文中,我们将简要概述大块单晶合成以及不同外延生长技术的特性和研究进展, 并指出了目前研究中存在的困难和挑战。
简介:镓氮化物的大数量(轧)nanowires经由Ga2O3电影在一个石英试管在950点在氧化的铝层上扔了的ammoniating被准备了。当水晶的wurtzite由X光检查衍射,X光检查光电子spectrometry扫描电子显微镜和精选区域的电子衍射轧了,nanowires被证实了。传播电子显微镜(TEM)和扫描电子显微镜学(SEM)表明nanowires非结晶、不规则,与从30nm到直到十微米的80nm和长度的直径。精选区域的电子衍射显示有六角形的wurtzite结构的nanowire是单身者水晶。生长机制简短被讨论。
简介:制备出高质量纳米晶是金属氧化物纳米晶的基础研究和技术运用的首要问题.在有机溶剂中,利用一步法能够合成出较高结晶度的立方相Ga2O3纳米晶,对该样品的微观形貌和光学性能进行了表征.研究表明,利用一步法获得的纳米晶具有单分散性,晶格条纹明显,平均直径为6nm.在光学性能方面,立方相Ga2O3纳米晶在紫外区域有较宽的吸收.此外,通过提高合成温度能够从紫外到蓝光范围内调节荧光光谱.
简介:TheRatnagotravibbāga(abbr.RGV)isoneofthemostinfluentialtextsamongIndicworksthatteachtheBuddha-naturedoctrineinTibet.NotranslationofthetextseemstohaveexistedinTibetbeforetheⅡthcentury,inasmuchasnocatalogueoftheimperialperiod(the9thcentury),suchasthelDandkarmaandvPhangthangma,showsanyrecord.AlthoughonlyasingleTibetantranslationisextant(thatofrNgogBloldanshesrab[1069-Ⅱ09]andSajjana),vGosLotsābagZhonnudpal(1392-1481)reportsthatuptohistimesixtranslationshadalreadybeenmade:1
简介:ElectronleakagestillneedstobesolvedforInGaN-basedblue-violetlaserdiodes(LDs),despitethepresenceoftheelectronblockinglayer(EBL).Toreducefurtherelectronleakage,anewstructureofInGaN-basedLDswithanInGaNinterlayerbetweentheEBLandp-typewaveguidelayerisdesigned.TheopticalandelectricalcharacteristicsoftheseLDsaresimulated,anditisfoundthattheadjustedenergybandprofileinthenewstructurecanimprovecarrierinjectionandenhancetheeffectiveenergybarrieragainstelectronleakagewhentheIncompositionoftheInGaNinterlayerisproperlychosen.Asaresult,thedeviceperformancesoftheLDsareimproved.
简介:AmassofGaNnanowireshasbeensuccessfullysynthesizedonSi(111)substratesbymagnetronsputteringthroughammoniatingGa2O3/Cofilmsat950C.X-raydiffraction,scanningelectronmicroscopy,highresolutiontransmissionelectronmicroscopeandFouriertransformedinfraredspectraareusedtocharacterizethesamples.Theresultsdemonstratethatthenanowiresareofsingle-crystalGaNwithahexagonalwurtzitestructureandpossessrelativelysmoothsurfaces.ThegrowthmechanismofGaNnanowiresisalsodiscussed.更多还原
简介:Theinfluenceofp-typeGaN(pGaN)thicknessonthelightoutputpower(LOP)andinternalquantumefficiency(IQE)oflightemittingdiode(LED)wasstudiedbyexperimentsandsimulations.TheLOPofGaN-basedLEDincreasesasthethicknessofpGaNlayerdecreasesfrom300nmto100nm,andthendecreasesasthethicknessdecreasesto50nm.TheLOPofLEDwith100-nm-thickpGaNincreasesby30.9%comparedwiththatoftheconventionalLEDwith300-nm-thickpGaN.ThevariationtrendofIQEissimilartothatofLOPasthedecreaseofGaNthickness.ThesimulationresultsdemonstratethatthehigherlightefficiencyofLEDwith100-nm-thickpGaNisascribedtotheimprovementsofthecarrierconcentrationsandrecombinationrates.