简介:利用角分辨紫外光电子谱对乙烯和乙炔气体在Ru(1010)表面的吸附及与K的共吸附的研究结果表明:当衬底温度超过200K,乙烯即发生脱氢反应,σCH和σCC能级均向高结合能方向移动。在室温下,σCH和σCC能级位置与乙炔在Ru(1010)表面的吸附时的分子能级完全一致。乙烯发生脱氢反应后的主要产物为乙炔。衬底温度从120K到室温,Ru(1010)表面上乙炔的σCH和σCC能级均未发现变化。室温下乙炔仍然可以在Ru(1010)表面以分子状态稳定吸附。在有K的Ru(1010)表面上,室温时σCC谱峰几乎。碱金属K的存在促进了乙炔的分解。
简介:ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.
简介:StableoperatingregionintheHL-1Mtokamakhasbeenextendedbymeansofwallconditioning,corefuellingandcurrentcontroltechniques.Themechanismsoftheextensionareanalyzedinthispaper.Lithiumizationdiminishestheimpuritiesandhydrogenrecyclingtothelowestlevel.Afterlithiumizationahighdensityupto7×1019m-3wasobtainedeasilybystronggaspuffingwithordinaryohmicdischargealone.MoreattractivelywefoundthatmetalLi-coatingexhibitedtheeffectsofwallstabilization.Thelowqalimitwithhigherdensitywasextendedbyafactorof1.5~2incomparisonwiththatforboronization,and1.2forsiliconization.Siliconizationnotonlyextendedstableoperatingregionsignificantlybyitself,butalsoprovidedagoodtargetplasmaforotherexperimentsofraisingdensitylimit.Corefuellingschemesarefavourableespeciallyforsiliconizedwallwithahigherlevelofmedium-Zimpurity(Z=14).Aftersiliconizationthemaximumdensitynearto1020m-3wasachievedbyacombinationofsupersonicmoleculebeaminjectionandmultipelletinjection.ThenewdefinedslopeofHugilllimitillustratingmoreclearlythesituationunderlowqaandhighnedischargeswascreatedtoindicatethenewregionextendedbycombiningIpramp-upwithcorefuelling.TheslopewithalargeMurakamicoefficientincreasedbyafactorof50~60%.
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简介:Thetransportprocessof12CionsinwaterwasstudiedwithSRIMcodeandGeant4toolkit.TheSRIMresultsindicatethatthetransversediffusionof12Cionbeamcausesdistortionofenergydepositalongthebeamdirection.Thedistortionbecomesmorenotableasthetrans-versediffusionincreases.ThesimulationresultsofGeant4indicatethattheinfluenceofsecondaryfragmentsonenergydepositdistributionwouldbethemainfactorcausingthedistortioninhigherenergyrange.Intheregionadjacenttothebeamlinewherethecontributionfrom12Cionsdomi-nates,thecontributionsfromsecondaryfragmentsareignorable.Thefurtherfromthebeamaxistheregionlocates,thelargerthecontributionsfromsecondaryfragments,untilthecontributionsfromsecondaryfragmentsareignorable.Thefurtherfromthebeamaxistheregionlocates,thelargerthecontributionsfromsecondaryfragments,untilthecontributionsfromsecondaryfrag-mentsexceedthatof12C.Amongallthesecondaryfragments,thecontributionsofH,HeandBionsaremostlynotable.Itisalsofoundthatsomepositron-emittingsecondaryfragmentscouldbeveryusefulforpositionemittingtomography(PET).
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简介:BasedonthesinglebiasingelectrodeexperimentstooptimizetheconfinementofplasmainthedeviceofKT-5Ctokamak,dual-biasingelectrodeswereinsertedintotheKT5Cplasmaforthefirsttimetoexploretheenhancingeffectsofbiasingandthemechanismsofthebiasing.Bymeansofapplyingdifferentcombinationsofbiasingvoltagesontothedualelectrodes,thechangesofE_r,whicharethekeyfactorforboostinguptheE_r×Bflowshear,wereobserved.Thetimeevolutionshowedthattheinnerelectrodeplayedamajorroleindual-biasing,whichdrewlargercurrentthantheouterone.Theouterelectrodeproducedlittleinfluence.Itturnedoutthatthedual-biasingelectrodeswereaseffectiveasasingleoneinimprovingtheplasmaconfinement,forthemechanismofbiasingwasessentiallyanedgeeffect.
简介:Vacuumtreatmentandion-beambombardmentaretwomajorprocessesinthelowenergyion-beamimplantation.Toaccuratelystudythecontributionsofthesetwomajorfactorstothebioeffectsseparately,theM_1generationvariationofArabidopsisthalianawithion-beamimplantationandvacuumtreatmentwerecomparedthroughaseriesofkeyplantdevelopmentparametersincludingmorphologicalobservation,biochemicalassayandRAPD(randomamplifiedpolymorphicDNA)analysis.Theresultsshowedthation-beamimplantationhadobviouseffectonalmostalloftheseparameters,andthevacuumtreatmenthadsomeimpactsonseveralmorphologicalparameterssuchastheboltingtimeandthelengthoftheprimarystem.Takingtheresultstogether,theindicationisthatvacuumtreatmenthassomeslightcontributionstothebioeffectsofion-beamimplantationwhileion-beambombardmentitselfisthemajorcreatorofthebioeffects.