简介:Modelingandreasoningondomaincontextsplayakeyroleforaddingintelligencetocommunicationservices,andtheapproachofcapability-basedrequirementengineeringensuresthescientificityandaccuracyofrequirementelicitation.Thispaperpresentsacapability-basedcontextontologymodelingapproachforcommandandcontrol,communication,computer,intelligence,surveillanceandreconnaissance(C4ISR)communication.Primarily,acapability-basedC~4ISRcommunicationmeta-conceptmodelandaC~4ISRcommunicationcontextmeta-ontologyareconstructed.ThecontextontologyisestablishedundertheconstraintsoftheC~4ISRcommunicationcontextmeta-ontology,andfurthermore,algorithmsareproposedtosupportcontextreasoningbasedondescriptionlogic.Acasestudyispresentedtodemonstrateapplicabilityoftheproposedmethod.
简介:全球半导体行业沉积设备供应商AIXTRON凭借其全自动新产品——金属氧化物化学汽相沉积(MOCVD)系统AIXG5+C,获商业杂志CompoundSemiconductor颁授2016年CSHigh-VolumeManufacturingAward奖项。该奖项是业界对国际化合物半导体行业内的关键创新领域进行评判,围绕芯片制造工艺流程,强调对业界发展所作出的贡献。AIXTRON方面表示,AIXG5+C是全球首套完备的MOCVD系统解决方案,可以满足硅基氮化镓LED和功率器件领域的外延类产品需求。该产品融合两项关键性创新,
简介:Inthiswork,Bi2Te3films(250nm)arefabricatedonSiO2/Sisubstratesbyradiofrequency(RF)magnetronsputteringatroomtemperature,andthepreparedfilmsareannealedoverthetemperaturerangeof200°Cto400°C.Crystallinityandelectricalpropertiesofthefilmscanbetunedcorrespondingly.ThepowerfactorsofBi2Te3filmsof0.85μW/K2cmto11.43μW/K2cmwereachievedafterannealing.Theinfraredreflectancemeasurementsfrom2.5μmto5.0μmdemonstratethatthereisalsoaslightred-shiftoftheplasmaoscillationfrequencyintheBi2Te3films.Bymeansofplasmoniccalculations,weattributethered-shiftofabsorptionpeakstothereductionofcarrierconcentrationandthechangeofeffectivemassofBi2Te3filmswiththeincreasedannealingtemperature.
简介:我们认识到NiCo2由激光照耀的O4nanomaterialsNiCo2有不同集中的O4暂停。结果表明同样准备的样品是有568nm和优异dispersity的最大的平均尺寸的需要的范围,它在0.30JDS的精力密度被获得)。Obwohl死ErkrankungenvieleGemeinsamkeitenaufweisen(Fiebersch浭湥慦獳湵?浉畭歮浯牰浯瑩楴牥湵?楢杲?浩敭?楥?牥???獥删獩歩????釧????????闧?郦????駥?釧?闦??駥?跧???闦?臧?臧????駥膹?郦?飧?蓦???釧?釧?蓦???跧?觧??跧?????觧?釧??闦??闦?觧?郧?闦???跧???釧????触?跧??趥觧?鷦??
简介:Aterahertz(THz)polarizerandswitchstructureisproposedbasedonthephasetransitionofvanadiumdioxide(VO2).WhenVO2isintheinsulationphase,theresonancefrequenciesoftheproposedstructureare1.49THzand1.22THzforthex-andy-polarization,respectively.ItcanperformasaTHzpolarizerwithextinctionratiosof52.5dBand17dBforthey-andx-polarization,respectively;WhenVO2transformsintometallicphase,theresonancefrequencyforx-polarizationwaveshiftsfrom1.49THzto1.22THz,whilethatremainsstillforthey-polarizationcomponent.Itmeansthatthestructurecanworkasapolarization-dependentTHzswitchwithahighextinctionratioof32dB.
简介:从工信部获悉,工信部副部长辛国斌对《国家智能制造标准体系建设指南》进行了解读,他表示,智能带IJ造是《中国制造2025》的主攻方向,该指南明确了建设智能制造标准体系的总体要求、建设思路、建设内容和组织实施方式,从生命周期、系统层级、智能功能等3个维度建立了智能制造标准体系参考模型,并由此提出了智能制造标准体系框架,框架包括“基础”、“安全”、“管理”、“检测评价”、“可靠性”等5类基础共性标准,和“智能装备”、“智能工厂”、“智能服务”、“工业软件和大数据”、“工业互联网”等5类关键技术标准,以及包括《中国制造2025》中10大应用领域在内的不同行业的应用标准。辛国斌表示,计划每2-3年对该指南进行修订。