简介:Theinvertedbottom-emittingorganiclight-emittingdevices(IBOLEDs)wereprepared,withthestructureofITO/A1(xnm)/LiF(1nm)/Bphen(40nm)/CBP:Girl(14%):R-4b(2%)(10nm)/BCP(3nm)/CBP:Glrl(14%):R-4b(2%)(20nm)/TCTA(10nm)/NPB(40nm)/MoO3(40nm)/A1(100rim),wherethethicknessofelectroninjectionlayerA1(x)are0nm,2nm,3nm,4nmand5nm,respectively.Inthispaper,theelectroninjectionconditionandluminancepropertiesofinverteddeviceswereinvestigatedbychangingthethicknessofA1layerinAFLiFcompoundthinfilm.ItturnsoutthattheintroductionofA1layercanimproveelectroninjectionofthedevicesdramatically.Furthermore,thedeviceexertslowerdrivingvoltageandhighercurrentefficiencywhenthethicknessofelectroninjectionA1layeris3nm.Forexample,thecurrentefficiencyofthedevicewith3-urn-thickA1layerreaches19.75cd·A^-1whendrivingvoltageis7V,whichis1.24,1.17and17.03timeslargerthanthoseofthedeviceswith2nm,4nmand5nmA1layer,respectively.Thedevicepropertyreachesuptothelevelofcorrespondingconventionaldevice.Inaddition,allin-verteddeviceswithelectroninjectionA1layershowsuperiorstabilityofcolorcoordinateduetotheadoptionofco-evaporationemittinglayerandBCPspacer-layer,andthecolorcoordinateoftheinverteddevicewith3-nm-thickAIlayeronlychangesfrom(0.5806,0.4056)to(0.5328,0.4363)whendrivingvoltageincreasesfrom6Vto10V.
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