简介:NOR型FLASH存储器因其能够长久地保持数据的非易失性(Non-Volatile)特点,被广泛用作各类便携型数字设备的存储介质,但由于此类器件的编程及擦写均需写入特定指令,以启动内置编程/擦除算法,从而使得采用自动测试系统对其进行测试也具有较高难度。因此,研究NOR型FLASH存储器的测试技术,并开发此类器件的测试平台具有十分重要的意义。首先以AMD公司的AM29LV160DT为例,介绍了NOR型FLASH存储器的基本工作原理,接着详细阐述了一种采用J750EX系统的DSIO模块动态生成测试矢量的方法,从而能够更为简便、高效地对NOR型FLASH存储器的功能进行评价。
简介:Inthiswork,Bi2Te3films(250nm)arefabricatedonSiO2/Sisubstratesbyradiofrequency(RF)magnetronsputteringatroomtemperature,andthepreparedfilmsareannealedoverthetemperaturerangeof200°Cto400°C.Crystallinityandelectricalpropertiesofthefilmscanbetunedcorrespondingly.ThepowerfactorsofBi2Te3filmsof0.85μW/K2cmto11.43μW/K2cmwereachievedafterannealing.Theinfraredreflectancemeasurementsfrom2.5μmto5.0μmdemonstratethatthereisalsoaslightred-shiftoftheplasmaoscillationfrequencyintheBi2Te3films.Bymeansofplasmoniccalculations,weattributethered-shiftofabsorptionpeakstothereductionofcarrierconcentrationandthechangeofeffectivemassofBi2Te3filmswiththeincreasedannealingtemperature.
简介:我们认识到NiCo2由激光照耀的O4nanomaterialsNiCo2有不同集中的O4暂停。结果表明同样准备的样品是有568nm和优异dispersity的最大的平均尺寸的需要的范围,它在0.30JDS的精力密度被获得)。Obwohl死ErkrankungenvieleGemeinsamkeitenaufweisen(Fiebersch浭湥慦獳湵?浉畭歮浯牰浯瑩楴牥湵?楢杲?浩敭?楥?牥???獥删獩歩????釧????????闧?郦????駥?釧?闦??駥?跧???闦?臧?臧????駥膹?郦?飧?蓦???釧?釧?蓦???跧?觧??跧?????觧?釧??闦??闦?觧?郧?闦???跧???釧????触?跧??趥觧?鷦??
简介:Aterahertz(THz)polarizerandswitchstructureisproposedbasedonthephasetransitionofvanadiumdioxide(VO2).WhenVO2isintheinsulationphase,theresonancefrequenciesoftheproposedstructureare1.49THzand1.22THzforthex-andy-polarization,respectively.ItcanperformasaTHzpolarizerwithextinctionratiosof52.5dBand17dBforthey-andx-polarization,respectively;WhenVO2transformsintometallicphase,theresonancefrequencyforx-polarizationwaveshiftsfrom1.49THzto1.22THz,whilethatremainsstillforthey-polarizationcomponent.Itmeansthatthestructurecanworkasapolarization-dependentTHzswitchwithahighextinctionratioof32dB.