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1 个结果
  • 简介:GaxIn1-xAs1-ySbyalloyshavebeengrownbyatmosphericpressureMOCVDonn-GaSb(Te-doped)substrate.Thesohdcompositionwasdeterminedbyusingelectronmicroprobe.ThealloysofGalnAsSbwithcompositioninmiscibilitygapweresuccessfullygrown.TheopticalpropertiesofGaxIn1-xAs1-ySbylaverswerecharacterizedbythephotoluminescenceandtheinfraredabsorption.Thespectralresponsesofp+-GaInAsSb/p-GaxIn1-xAs1-ySby/n-GaSbdetectorsshowedwavelengthcutoffat2.4μmanddetectivity-D*=5×108cmHz1/2/Watroomtemperature.

  • 标签: MOCVD GaxIn+(1-x)As1-ySby Photoluminescence INFRARED absorption INFRARED