Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape

(整期优先)网络出版时间:2009-04-14
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ThediamondfilmsadherenttoSisubstratearedepositedwiththemicrowaveplasmaCVD(MPCVD)atmicrowavepowersof6000Wand4000Wfrom6hto10h,respectively,theinternalstressesofthefilmsaremeasuredbyXRD.Spectralpeakshiftandwideningareappliedtocalculatethemagnitudesofmacroandmicrostresses.Theresultsshowthatthemacrostressistensile.Theinternalstresscanbecontrolledbythemicrowavepower.Withthemicrowavepowerincreasing,theintrinsicandmacrostressesdecrease,andthemicrostressincreasessignificantly.Also,itcanbefoundthatthemacroandmicrostressesincreasewithdepositedtimewhentheotherconditionsarethesame.