Preparation of the In2O23·Sn Films by MO-CVD Technique

IntroductionIn2O3·Snfilmshavehightransparency（>95％）withinthevisiblespectralregion,lowresistivity(10-2—10-4ohm·cm)atroomtemperatureandsuperiorthermalstability.Thesefilmshavebeenappliedtosolarcells,electronicsandphotoelectronicsfields.Inrecentyears,organometallic-CVDmethodhasemergedasasuccessfulalternatetothephysicalmethodsandgeneralCVDforthegrowthofthesefilms.TheMO-CVDtech-