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Study on Valence Band Offsets at Strained Hetrojunctions

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摘要 Amethod,whichcanpredictthevalencebandoffsetsatstrainedlayerheterojunctionsunderdifferentstrainsituationsonlybycalculatingbandstructuresanddeformationparametersofthebulkmaterials,issuggested.Theapplicabilityofthismethodisverifiedbycalculationofthevalencebandoffsetsatstrainedlayerheterojuntions,suchasInP/InAs,InP/GaP,GaAs/InAs,GaP/GaAsandAlAs/InAswithvariousstrainconditions.

DOI ldeygvnnj3/1995489

作者 ZHENGYong－mei

机构地区不详

出处《半导体光子学与技术：英文版》 1999年4期

关键词应变异质结价电子带偏移平均带能法畸变位

分类 [电子电信][物理电子学]

出版日期 1999年04月14日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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来源期刊

半导体光子学与技术：英文版

半导体光子学与技术：英文版

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相关关键词

应变异质结价电子带偏移平均带能法畸变位

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