简介:利用角分辨紫外光电子谱对乙烯和乙炔气体在Ru(1010)表面的吸附及与K的共吸附的研究结果表明:当衬底温度超过200K,乙烯即发生脱氢反应,σCH和σCC能级均向高结合能方向移动。在室温下,σCH和σCC能级位置与乙炔在Ru(1010)表面的吸附时的分子能级完全一致。乙烯发生脱氢反应后的主要产物为乙炔。衬底温度从120K到室温,Ru(1010)表面上乙炔的σCH和σCC能级均未发现变化。室温下乙炔仍然可以在Ru(1010)表面以分子状态稳定吸附。在有K的Ru(1010)表面上,室温时σCC谱峰几乎。碱金属K的存在促进了乙炔的分解。
简介:ThispaperpresentsabriefoverviewofCO2reformingofCH4(CRM)byvariousformsof'arc'plasma,whichismoresuitabletoCRM,andtheenergyefficiencyisusedtoevaluatedifferentplasmaprocessesspecifically.Accordingtothereportedresults,thearcthermalplasmawithbinodeexhibitedbetterperformance.Moreover,theplasmaCRMprocesswascomparedwiththereportedplasmasteamreformingofCH4(SRM)process,andtheresultsshowedthattheformerprocesshasadvantagesonenergyefficiencyandCH4consumption.Additionally,itisbelievedthattheplasmaCRMprocesswouldbecompetitivewiththeconventionalSRMprocessinbothenergyefficiencyandCO2emissiononcetheheatmanagementisemphasizedandtherenewablepowerisused.Finally,aconceptofplasmareactorforindustrialapplicationisproposed.
简介:AnovelfittingprocedureisproposedforabetterdeterminationofH2rovibrationaldistributionfromtheFulcher-abandspectroscopy.WehaverecalculatedthetransitionprobabilitiesandtheresultsshowthattheydeviatefromFranck-Condonapproximationespeciallyforthenon-diagonaltransitions.Wealsocalculatedthecompletesetsofvibrationallyresolvedcrosssectionsforelectronimpactd3∏u-X3∑gtransitionbasedonthesemi-classicalGryzinskitheory.AnexampleofexperimentalstudyconfirmsthatcurrentapproachprovidesatoolforabetterdiagnosticsofH2rovibrationaldistributioninelectronicgroundstate.
简介:采用EXAFS方法研究了经中温等温和低温LN2处理的2mol%Y2O3-ZrO2陶瓷中Zr^4+和Y^3+离子的近邻结构。结果表明,与中温等温试样相比,LN2处理的试样中Zr-O层和Zr-Zr(Y)层的配位数显著减少,平均键长明显缩短;Y-O层配位数减少,Y-Zr(Y)层平均键长伸长;各配位层畸变程度均增大。两个试样的Y-O层配位数均高于Zr-O层配位数,表明点阵中的氧空位倾向于与Zr离子为邻。分析认为,该试样Zr-O配位层中较多的氧空位主要来源于从高温快速冷却时所保留下来的Schottky缺陷,对四方相稳定性和中温相变具有重要的影响。
简介:Moleculardynamicssimulationswereperformedtostudytheinteractionbetweenatomichydrogenandsiliconcarbide.Inthepresentstudy,wefocusontheeffectofthesurfacetemperatureonHinteractingwithsiliconcarbide.ThesimulationresultsshowthattheretentionofHatomsinthesampledecreaseslinearlywithincreasingsurfacetemperature.ThedepthprofileanalysisshowsthatthesampleismodifiedbyHbombardment,andthedensityofHatomsisgreaterthanthoseofSiandCatomsneartheinterfaceregionbetweentheH-containingregionandthebulk.However,nearthesurfaceregionthedensitiesofH,SiandCatomsarealmostequivalent.Inthemodifiedlayer,thebondsconsistofSi-CandSi-HandC-H.ThefractionofSi-Cbondsisthegreatest.OnlyafewC-Hbondsarepresent.
简介:Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.
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简介:研究KTiOAsO4晶体的生长缺陷,对于改善它的性能和应用前景,有很大的意义。本文利用化学腐蚀光学显微术和同步辐射X射线形貌术研究了KTiOAsO4晶体的缺陷,实验结果表明,两种腐蚀剂对于显示KTA晶体的表面缺陷效果显著,KTA晶体中主要的缺陷有铁电畴、生长层、扇形界、位错和包裹物。讨论了这些缺陷形成的原因。
简介:Thedeviceofacetyleneproductionbyhydrogen(H-)plasmapyrolysiscoalisexaminedanddevelopednotonlyforstudyingtheapplicationoflowtemperatureplasmabutalsoforstudyingthecleanuseofcoal.Thepower-supplycontrolsystemisusedtoensuresupplyingasteadyenergytogenerateandmaintaintheplasmaelectricarcofthedevice.Thehardwareconfigurationandthesoftwaredesignofthesystemaredescribedinthispaper.Verifiedbyexperiments,thissystemcanmeettherequirementsofreal-timeperformance,reliabilityandextensibilityforthedevice.