简介：Wehavesuccessfullydemonstratedthathighqualityandhighdielectricconstantlayerscanbefabricatedbylowtemperaturephoto-inducedor-assistedprocessing.Ta2O5andZrO2havebeendepositedatt＜400℃bymeansofaUVphoto-CVDtechniqueandHfO2byphoto-assistedsol-gelprocessingwiththeaidofexcimerlamps.TheUVannealingofas-grownlayerswasfoundtosignificantlyimprovetheirelectricalproperties.Lowleakagecurrentdensitiesontheorderof10-8A/cm2at1MV/cmfordepositedultrathinTa2O5filmsandca.10-6A/cm2forthephoto-CVDZrO2layersandphoto-irradiatedsol-gelHfO2layershavebeenreadilyachieved.TheimprovementintheleakagepropertiesoftheselayersisattributedtotheUV-generatedactiveoxygenspeciesO(1D)whichstronglyoxidizeanysuboxidestoformmorestoichiometricoxidesonremovingcertaindefects,oxygenvacanciesandimpuritiespresentintheas-preparedlayers.Thephoto-CVDTa2O5filmsdepositedacross10.16-cmSiwafersexhibitahighthicknessuniformitywithavariationoflessthan±2.0%beingobtainedforultrathinca.10nmthickfilms.Thelamptechnologycaninprinciplebeextendedtolargerareawafers,providingapromisinglowtemperatureroutetothefabricationofarangeofhighqualitythinfilmsforfutureULSItechnology.