简介:ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.
简介:Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.
简介:TheauthorsmainlyconcernthesetUfofc∈Csuchthatthepowerdeformationzf(z)/zcisunivalentintheunitdisk|z|<1foragivenanalyticunivalentfunctionf(z)=z+a2z2+···intheunitdisk.ItisshownthatUfisacompact,polynomiallyconvexsubsetofthecomplexplaneCunlessfistheidentityfunction.Inparticular,theinteriorofUfissimplyconnected.Thisfactenablesustoapplyvariousversionsoftheλ-lemmafortheholomorphicfamilyzf(z)/zcofinjectionsparametrizedovertheinteriorofUf.ThenecessaryorsufficientconditionsforUftocontain0or1asaninteriorpointarealsogiven.