简介:采用金属有机化学气相沉积法在Si(111)衬底上生长了AlN外延层。高分辨透射电子显微镜显示在AlN/Si界面处存在非晶层,俄歇电子能谱测试表明Si有很强的扩散,拉曼光谱测试表明存在Si-N键,另外光电子能谱分析表明非晶层中存在Si3N4。研究认为MOCVD高温生长造成Si的大量扩散是非晶层存在的主要原因,同时非晶Si3N4层也将促使AlN层呈岛状生长。
简介:AdhesionimprovementofCVDdiamondfilimbyintroducinganelectro-depositedinterlayer;Agitation:themostversatiledegreeoffreedomforsurfacefinishers;Developmentofhydroxyapatitecoatingonporoustitaniumviaelectro-depositiontechnique;EffectofintensemagneticfieldonCdTeelectro-deposition;ElectrodepositionofMetallicLithiumonaTungstenElectrodein1-Butyl-l-methylpyrrolidiniumBis(tritluoromethanesulfone)imideRoom-temperatureMoltenSalt
简介:[篇名]Bi-2212:AnHTSCoatedConductor,[篇名]Carbonnanotube-perovskite-compositesasnewelectrodematerial,[篇名]CeO{sub}2bufferlayerbypulsedlaserdepositionforYBCOcoatedconductor,[篇名]CeO{sub)2BufferLayersDepositedbyPulsedLaserDepositionforTFA-MODYBa{sub}2Cu{sub}3O{sub)(7-x)SuperconductingTape,[篇名]Characteristicofthin-filmNTCthermalSensors,[篇名]Characteristicsofcobalt-dopedzincoxidethinfilmspreparedbypulsedlaserdeposition,[篇名]CharacteristicsofTiO{sub}2ThinFilmasaPhotocatalystPrepardUsing-thePulsedLaserDepositionMethod.
简介:Co-dopingDepositionofp-typeZnOThinFilmsusingKrFExcimerLaserAblation;ComparisonofGrowthMorphologyinGe(001)HomoepitaxyUsingPulsedLaserDepositionandMBE;CompositionandstructureofBCNfilmspreparedbyionbeam-assistedpulsedlaserdeposition;Compositionofβ-FeSi{sub}2thin-filmsgrownbyapulsedlaserdepositionmethod
简介:[篇名]Electro-depositionoftantalumontumgstenandnickelinLiF-NaF-CaF{sub}2meltcontainingK{sub}2TaF{sub}7electrochemicalstudy,[篇名]Electro-EpitaxialBufferLaycrsforREBCOTspeArchitectures,[篇名]EQCMwithair-gapexcitationelectrode.Calibrationtestswithcopperandoxygencoatings,[篇名]FormationofWell-definedNanocolumnsbyIonTrackingLithography,[篇名]Fundamentalexperimentalstudyonfreefabricationofnanocrystallinecopperbulkbyselectiveelectrodepositionwithelectrolytejet,[篇名]Magneticnanowirearraysobtainedbyelectro-depositioninorderedaluminatemplates,[篇名]Morphologicalcharacteristicsofnickelparticleselectrodepositedfromchloridedominantsolution.