简介:2009甲型(H1N1pdm09)流感大流行后,几个单价大流行性流感疫苗通过快速程序被许可使用。发作性睡病作为疫苗的副作用被发现,主要是在接受用欧洲的灭活纯化协议生产的AS03佐剂A(H1N1)流感疫苗的人群。感染野生甲型(H1N1)大流行流感病毒后没有接种疫苗的人群,发作性睡病的发病也在增加,这提示此种病毒抗原的作用在发作性睡病疾病发展中具有一定作用。本文进行了发作性睡病背景简介,概述了流感疫苗制剂的不同类型,探讨了自身免疫性疾病和自然感染之间的关系。
简介:摘要目的在甲型H1N1流感确诊患者当中,我们应用中西医结合方式进行早期干预治疗,以期能够缩短患者症状持续时间,减轻症状严重程度,降低危重症及并发症发生率。方法选择确诊甲流感的门诊及住院患者共计75人,随机分入A、B两组,A组应用标准西医治疗方法,B组于疾病在西医治疗基础上早期即加用中医药干预治疗。结果B组相对A组患者,临床症状,肝肾功能受损程度,胸部CT示肺炎发生率及严重程度B组均低于A组,住院时间B组少于A组。结论应用中西医结合方式进行早期干预治疗,能够缩短患者症状持续时间,减轻症状严重程度,降低危重症及并发症发生率。对于有效防治甲型H1N1流感具有积极的意义,值得推广。
简介:ElectronleakagestillneedstobesolvedforInGaN-basedblue-violetlaserdiodes(LDs),despitethepresenceoftheelectronblockinglayer(EBL).Toreducefurtherelectronleakage,anewstructureofInGaN-basedLDswithanInGaNinterlayerbetweentheEBLandp-typewaveguidelayerisdesigned.TheopticalandelectricalcharacteristicsoftheseLDsaresimulated,anditisfoundthattheadjustedenergybandprofileinthenewstructurecanimprovecarrierinjectionandenhancetheeffectiveenergybarrieragainstelectronleakagewhentheIncompositionoftheInGaNinterlayerisproperlychosen.Asaresult,thedeviceperformancesoftheLDsareimproved.
简介:Theinfluenceofp-typeGaN(pGaN)thicknessonthelightoutputpower(LOP)andinternalquantumefficiency(IQE)oflightemittingdiode(LED)wasstudiedbyexperimentsandsimulations.TheLOPofGaN-basedLEDincreasesasthethicknessofpGaNlayerdecreasesfrom300nmto100nm,andthendecreasesasthethicknessdecreasesto50nm.TheLOPofLEDwith100-nm-thickpGaNincreasesby30.9%comparedwiththatoftheconventionalLEDwith300-nm-thickpGaN.ThevariationtrendofIQEissimilartothatofLOPasthedecreaseofGaNthickness.ThesimulationresultsdemonstratethatthehigherlightefficiencyofLEDwith100-nm-thickpGaNisascribedtotheimprovementsofthecarrierconcentrationsandrecombinationrates.