简介:Chalcopyrite-typeCuInSe2nanoparticlesaresuccessfullypreparedbyusingIn2Se3nanoparticlesasaprecursorreactedwithcopperchloride(CuCl)solutionviaaphasetransformationprocessinlowtemperature.Thereactiontimeisakeyparameter.Afterthereactiontimeincreasingfrom0.5hto8h,In2Se3andCuClreactwitheachothergraduallyviaphasetransformationintoCuInSe2withoutanyintermediatephase.ThecrystallinestructureandmorphologyoftheCuInSe2nanoparticlesarecharacterizedbyX-raydiffraction(XRD)andfieldemissionscanningelectronmicroscopy(FESEM).ThediameterofCuInSe2nanoparticleswithgooddispersibilityrangesfrom10nmto20nm.ThebandgapoftheCuInSe2nanoparticlesis1.04eVcalculatedfromtheultraviolet-visible(UV-VIS)spectrum.
简介:Inthispaper,wedemonstratetheacetylehe(C2H2)sensorwithhighsensitivityusingahollow-corephotonicbandgapfiber(HC-PCF).ExperimentsformeasuringC2H2concentrationsingasmixtureareperformed.Usinga2m-longHC-PCFasgascell,thespectrumofacetyleneatn1+n3bandhasbeenmeasured,andtheP11-branchhasbeenselectedforthepurposeofsensing.Aminimumdetectivityof143partspermillionbyvolume(ppmv)forthesystemconfigurationisestimated.
简介:Inthiswork,Bi2Te3films(250nm)arefabricatedonSiO2/Sisubstratesbyradiofrequency(RF)magnetronsputteringatroomtemperature,andthepreparedfilmsareannealedoverthetemperaturerangeof200°Cto400°C.Crystallinityandelectricalpropertiesofthefilmscanbetunedcorrespondingly.ThepowerfactorsofBi2Te3filmsof0.85μW/K2cmto11.43μW/K2cmwereachievedafterannealing.Theinfraredreflectancemeasurementsfrom2.5μmto5.0μmdemonstratethatthereisalsoaslightred-shiftoftheplasmaoscillationfrequencyintheBi2Te3films.Bymeansofplasmoniccalculations,weattributethered-shiftofabsorptionpeakstothereductionofcarrierconcentrationandthechangeofeffectivemassofBi2Te3filmswiththeincreasedannealingtemperature.
简介:srzn2(PO4)2:在大气中的高温固相反应合成Sm3+荧光粉。srzn2(PO4)2:Sm3+荧光粉是通过紫外光有效激发(UV)和蓝色光,和发射峰被分配到2-6h54G5//2过渡(563nm),2-6h74G5//2(597nm和605nm)和2-6h94G5//2(644nm和653nm)。对srzn2发射强度(PO4)2:Sm3+的Sm3+浓度的影响,其浓度猝灭效应srzn2(PO4)2:钐也观察到。当掺杂离子(=Li,Na和K)离子的发光强度,srzn2(PO4)2:Sm3+可以明显增强。在国际照明委员会(CIE)的srzn2色坐标(PO4)2:Sm3+定位在橙红色的区域。结果表明,该荧光粉具有潜在的应用在白光发光二极管(LED)。
简介:Organicmultiplequantumwells(OMQWs)consistingofalternatinglayersoforganicmaterialshavebeenfabricatedfromtris(8-hdroxyquinoline)aluminum(Alq)and2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)byamultisource-typehigh-vacuumorganicmoleculardeposition.Fromthesmall-angleX-raydiffractionpatternsofAlq/PBDOMQWs,aperiodicallylayeredstructureisconfirmedthroughtheentirestack.TheAlqlayerthicknessintheOMQWswasvariedfrom1nmto4nm.Fromtheopticalaborption,photoluminescenceandelectroluminescencemeasurements,itisfoundthattheexcitonenergyshiftstohigherenergywithdecreasingAlqlayerthickness,ThechangesoftheexcitonenergycouldbeinterpretedastheconfinementeffectsofexcitonintheAlqthinlayers.Narrowingoftheemissionspectrumhasalsobeenobservedfortheelectroluminescentdevices(ELDs)withtheOMQWsstructureatroomtemperature.
简介:从工信部获悉,工信部副部长辛国斌对《国家智能制造标准体系建设指南》进行了解读,他表示,智能带IJ造是《中国制造2025》的主攻方向,该指南明确了建设智能制造标准体系的总体要求、建设思路、建设内容和组织实施方式,从生命周期、系统层级、智能功能等3个维度建立了智能制造标准体系参考模型,并由此提出了智能制造标准体系框架,框架包括“基础”、“安全”、“管理”、“检测评价”、“可靠性”等5类基础共性标准,和“智能装备”、“智能工厂”、“智能服务”、“工业软件和大数据”、“工业互联网”等5类关键技术标准,以及包括《中国制造2025》中10大应用领域在内的不同行业的应用标准。辛国斌表示,计划每2-3年对该指南进行修订。
简介:UnipolarresistiveswitchingbehaviorsoftheZnOandAl2O3/ZnOfilmsfabricatedonflexiblesubstratesbypulselaserdepositionwerestudiedinthispaper.Thefilmsweredepositedatroomtemperaturewithoutpost-annealingtreatmentduringtheprocess.XraydiffractionresultsindicatedthatZnOfilmhasadominantpeakat(002).ScanningelectronmicroscopyobservationshowedacolumnargrainstructureoftheZnOfilmtothesubstrate.ThebilayerdeviceofAl2O3/ZnOfilmshadstableresistiveswitchingbehaviorswithagoodenduranceperformanceofmorethan200cycles,highresistiveswitchingratioofover103atareadvoltageof0.1V,whichisbetterthanthatofthesingleoxidelayerdeviceofZnOfilm.Apossibleresistiveswitchingfilamentarymodewasdemonstratedinthispaper.TheconductionmechanismsofhighandlowresistancestatescanbeexplainedbyspacechargelimitedconductionandOhmic’sbehaviors.Theenduranceofthebilayer(BL)devicewasnotdegradeduponbendingcycles,whichindicatesthepotentialoftheflexibleresistiveswitchingrandomaccessmemoryapplications.
简介::Twonovelpoly[(3-alkyhhiophene-2,5-diyl)-(benzylidenequinomethane-2,5-diyl)s]derivatives,poly[(3-butylthiophene-2,5-diyl)-(p-N,N-dimethylamino)benzylidenequinomethane-2,5-diyl)](PBTDMABQ)andpoly[-(3-octylthiophene2,5-diyl)-(p-N,N-dimethylamino)benzylidenequinomethane-2,5-diyl)](POTDMABQ),weresynthesized.Thebandgapsofthetwopolymersarecalculatedas1.75eVforPBTDMABQand1.69eVforPOTDMABQ,respectively.Thehomogenousfilmsofthetwopolymerswerepreparedandtheirthird-ordernonlinearopticalpropertieswerestudiedbythebackwarddegeneratefour-wavemixingat532nm.Byusingtherelativemeasurementtechnique,thethird-ordernonlinearopticalsusceptibilitiesofPBTDMABQandPOTDMABQarecalculatedas5.62×10^-9and1.22×10^-8ESU,respectively.Itisfoundthatsubstitutedalkygroupshavestrongeffectsonthebandgapandnonlinearopticalpropertiesofthetwopolymers.Therelativelybigthird-ordernonlinearopticalsusceptibilitiesandsmallbandgapofPOTDMABQresultedmainlyfromthelongeralkylwithstrongelectron-donatingabilitycanenhancethedelocationdegreeofconjugatedπelectronics.