简介:Newmethodsforboththetreatmentofpulpwasteliquorcalledblackliquor(BL)andtherecoveryofchemicalsbyusingplasma,andtheconcentrationofBLwiththefreezingtechniqueweredeveloped.Thenewmethodsaimingatthepilotplantscalearedescribedandtheexperimentsinasmall-scaleresearchfacilityfordemonstrationandtestarepresented.Theenergyconsumptionfortreatingwasteliquidis1kg/kWh.Plasmaprocessingcanreducethecostsfortreatmentandeliminatepollution.
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简介:Atriggerdeviceandatriggeredpseudosparkswitch(TPSS)weredesignedbasedonsurfaceflashovertechnology,inordertomeettherequirementsfrompresentpulsepowertechnol-ogyandpulsecurrenttesttechnologysuchasalonglifetime,reliabilityinawidevoltagerange,ashortdelaytime,aswellassmalldelayjitters.Thetriggerdevicesweremadefromdifferentdielectricmaterials,withtheirpermittivitiesfromtenstothousands.ThetriggercharacteristicsofTPSSwereinvestigated.Theresultsindicatethatthehigh-dielectrictriggerdeviceshowsbetterperformanceandhigheremittedchargeoftheelectronemissionwithinalladjustedparametersincludingthegaspressureandappliedvoltage.Forthedielectricmaterialwithrelativepermittiv-ityε_rof3460,whenthegaspressureis7Pa,thehold-offvoltageofTPSSis28kV,theminimumtriggerswitchvoltagedropsto128V,theminimumdischargingdelaytimeanddelayjitterarelessthan35nsand6ns,respectively,andthereliableoperationcanbereachedwithinaverylargerangeofchargingvoltage,between0.46%and99%ofitsself-breakdownvoltage.
简介:Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.
简介:Chitosan(CTS)coatingscontainedcalcium(Ca)andphosphorus(P)ontitanium(Ti)surfacearepreparedbythecathodeliquidphaseplasmatechnology(CLPT),inacertainconcentrationelectrolytesolutionwithselectiveadditionsofammoniumdihydrogenphosphateandcalciumnitrate.Itisindicatedthattheparametersforastabledischargearevoltageof400V,frequencyof100Hz,dutycycleof30%basedonalargeamountofexperimentdata.Themorphology,structureandcompositionofthecoatedsamplesarestudiedbySEM,FTIR,XRD,XPS.Theresultsdemonstratethatthecompositecoatingsareuniform,andsomesolidparticlesofinorganicsaltcontainingcalciumandphosphorusdispersedonthecoatings.CAtestsshowthatthesamplestreatedbytheliquidplasmabecamelesshydrophilic.ThevariationofhydrophilicityontheCLPTtreatedtitaniumisattributedtothechangeofthefunctiongroupsonthesamplesurface.Meanwhile,apossibleformationmechanismofthecompositecoatingsisdiscussed.
简介:ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.