简介:Inthisstudy,tungsten(W)wascoatedonacopper(Cu)substratebyusingdouble-glowdischargetechniqueusingapureWpanelasthetargetandargon(Ar)asthedischargeandsputteringgas.ThecrystalstructureoftheWcoatingwasexaminedbyX-raydiffraction(XRD).Scanningelectronmicroscopy(SEM)wasperformedwithcross-sectionimagestoinvestigatethepenetrationdepthofWintotheCubody.Additionally,thepropertiesofwearabilityresistance,corrosionresistanceandmechanicalstrengthoftheWcoatedCumatrixwerealsomeasured.Itisconcludedthatindouble-glowplasma,WcoatedCucanbefacilelyprepared.ItisnoticedthatthetreatmenttemperatureheavilydominatesthepropertiesoftheW-Cucomposite.
简介:Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.
简介:Chemicalvapordeposition-tungsten(CVD-W)coatingcoveringthesurfaceoftheplasmafacingcomponent(PFC)isaneffectivemethodtoimplementthetungstenmaterialasplasmafacingmaterial(PFM)infusiondevices.ResidualthermalstressinCVD-Wcoatingduetothermalmismatchbetweencoatingandsubstratewassuccessfullysimulatedbyusingafiniteelementmethod(ANSYS10.0code).Thedepositionparametriceffects,i.e.,coatingthicknessanddepositiontemperature,andinterlayerwereinvestigatedtogetadescriptionoftheresidualthermalstressintheCVD-Wcoating-substratesystem.AndtheinfluenceofthesubstratematerialsonthegenerationofresidualthermalstressintheCVD-WcoatingwasanalyzedwithrespecttotheCVD-WcoatingapplicationasPFM.ThisanalysisisbeneficialforthepreparationandapplicationofCVD-Wcoating.
简介:TheaccumulationofHeonaWsurfaceduringkeV-Heionirradiationhasbeensimulatedusingclusterdynamicsmodeling.Thisisbasedmainlyonratetheoryandimprovedbyinvolvingdifferenttypesofobjects,adoptingup-to-dateparametersandcomplexreactionprocesses,aswellasconsideringthediffusionprocessalongwithdepth.Thesenewfeaturesmakethesimulatedresultscompareverywellwiththeexperimentalones.Theaccumulationanddiffusionprocessesareanalyzed,andthedepthandsizedependenceoftheHeconcentrationscontributedbydifferenttypesofHeclustersisalsodiscussed.TheexplorationofthetrappinganddiffusioneffectsoftheHeatomsishelpfulinunderstandingtheevolutionofthedamagesinthenear-surfaceofplasma-facingmaterialsunderHeionirradiation.