简介：Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.

简介：

简介：

简介：

简介：Theinfluenceontheeffectivenessofsterilizationbylow-temperatureplasmasterilizerCASP-80Awasinvestigatedsoastoprovideatheoreticalbasisforreducingmedicalcostsandachievingidealsterilizationeffectiveness.Toconducttheon-sitesimulationtest,aclinicalmaterialsterilizationtestandatestoftheinfluenceoforganicsubstancewereconducted,theformerbyusingtherepresentativeofBacillusStearothermophilus,preparingthebacteria-contaminatedcarrierthroughpolytetrafluoroethylene(PTFE)simulatedhoseendoscopes,andthelatterbyusingcalfserumastheinfluencefactoroftheorganicsubstance.TheresultsshowthattheCASP-80Alow-temperatureplasmasterilizercouldachieveeffectivesterilizationbyeithertheshort-cycleorthelong-cyclesterilizationmethoddependingondifferentmaterials,apparatus,andextentofcontamination.Theorganicsubstancescouldinfluencetheeffectivenessofsterilizationbythelow-temperatureplasma(H_2O_2)sterilizer.

简介：Depositionofnanocrystallinesilicon(nc-Si)onglassatverylowtemperaturesbyelectroncyclotronresonance(ECR)plasmaenhancedchemicalvapourdeposition(PECVD)wasinvestigated.Itwasshownthatnc-Sicouldbedepositedfromhydrogendilutedsilanegasatasubstratetemperatureof80℃withacrystallinefractionupto80%andalateralgrainsizeofaround50nm.Thiswasachievedbygrowingthenc-Siinalowpressureregimewhichensuredthatmono-silylspecieswerethedominantdepositionprecursor.Furthermore,ahighfluxofenergetichydrogenionswasrequiredtoinducecrystallisationofthesiliconmaterialthroughachemicalannealingprocess.

简介：本文利用同步辐射角分辨光电子谱研究了f.c.c.Fe与Cu{111}之间的界面。观察到了位于表面布里渊区中K点附近的界面态，表明它是一个有序的界面。垂直出射的价带谱表明外来Fe原子对衬底Cu{111}的能带结构无任何影响。这与互混的Co/Cu{111}的结果不同，表明界面处不存在Fe与Cu原子之间的互混。

简介：ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.