简介：Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.

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简介：InthedischargeofEASTtokamak,itisobservedthat（2,1）neoclassicaltearingmode（NTM）istriggeredbymodecouplingwitha（1,1）internalmode.Usingsingularvaluedecomposition（SVD）methodforsoftX-rayemissionandforelectroncyclotronemission（ECE）,thecouplingspatialstructuresandcouplingprocessbetweenthesetwomodesareanalyzedindetail.TheresultsofSVDforECErevealthatthephasedifferencebetweenthesetwomodesequalstozero.Thisisconsistentwiththeperfectcouplingcondition.Finally,performingstatisticalanalysisofγ1/1,ζ1/1andω2/1,wefindthatγ1/1moreaccuratelyrepresentsthecouplingstrengththanζ1/1,andγ1/1isalsostronglyrelatedtothe（2,1）NTMtriggering,whereγ1/1isthewidthof（1,1）internalmode,ζ1/1istheperturbedamplitudeof（1,1）internalmode,andω2/1denotesthemagneticislandwidthof（2,1）NTM.

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简介：本文利用同步辐射角分辨光电子谱研究了f.c.c.Fe与Cu{111}之间的界面。观察到了位于表面布里渊区中K点附近的界面态，表明它是一个有序的界面。垂直出射的价带谱表明外来Fe原子对衬底Cu{111}的能带结构无任何影响。这与互混的Co/Cu{111}的结果不同，表明界面处不存在Fe与Cu原子之间的互混。

简介：StableoperatingregionintheHL-1Mtokamakhasbeenextendedbymeansofwallconditioning,corefuellingandcurrentcontroltechniques.Themechanismsoftheextensionareanalyzedinthispaper.Lithiumizationdiminishestheimpuritiesandhydrogenrecyclingtothelowestlevel.Afterlithiumizationahighdensityupto7×1019m-3wasobtainedeasilybystronggaspuffingwithordinaryohmicdischargealone.MoreattractivelywefoundthatmetalLi-coatingexhibitedtheeffectsofwallstabilization.Thelowqalimitwithhigherdensitywasextendedbyafactorof1.5～2incomparisonwiththatforboronization,and1.2forsiliconization.Siliconizationnotonlyextendedstableoperatingregionsignificantlybyitself,butalsoprovidedagoodtargetplasmaforotherexperimentsofraisingdensitylimit.Corefuellingschemesarefavourableespeciallyforsiliconizedwallwithahigherlevelofmedium-Zimpurity(Z=14).Aftersiliconizationthemaximumdensitynearto1020m-3wasachievedbyacombinationofsupersonicmoleculebeaminjectionandmultipelletinjection.ThenewdefinedslopeofHugilllimitillustratingmoreclearlythesituationunderlowqaandhighnedischargeswascreatedtoindicatethenewregionextendedbycombiningIpramp-upwithcorefuelling.TheslopewithalargeMurakamicoefficientincreasedbyafactorof50～60%.

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简介：给出了北京正负电子对撞机（BEPC）同步辐射新组装的3W1Wiggler束斑强度分布及光子束流的测量结果，并与理论计算作了比较，两者得出了一致的结果。

简介：ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.

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简介：Zn_(1-x)Cu_xOthinfilmsweresynthesizedbytheradiofrequency(RF)magnetronsputteringtechniqueusingaZnOtargetcontainingdifferentpiecesofsmallCu-chips.X-raydiffraction(XRD)andscanningelectronmicroscopy(SEM)wereemployedtoanalyzethecrystallineandmicrostructureofthefihn,andX-rayphotoelectronspectroscopy(XPS)wasusedtoestablishthebondingcharacteristicsandoxidationstatesofcopperinsidetheZnOhost.Roomtemperature(RT)ferromagnetismwasobservedintheZn_(1-x)Cu_xOfilmsbyaQuantumDesignsuperconductingquantmninterferencedevice(SQUID)andthesaturationmagneticmomentofthefilmswasfoundtodecreasewiththeincreaseinCucontent.

简介：本文介绍了BSRF4W1B束线及XAFS实验站八五改造工程的目标，主要工作，及改进后该实验系统达到的各项主要技术指标及运行状态。

简介：Vacuumtreatmentandion-beambombardmentaretwomajorprocessesinthelowenergyion-beamimplantation.Toaccuratelystudythecontributionsofthesetwomajorfactorstothebioeffectsseparately,theM_1generationvariationofArabidopsisthalianawithion-beamimplantationandvacuumtreatmentwerecomparedthroughaseriesofkeyplantdevelopmentparametersincludingmorphologicalobservation,biochemicalassayandRAPD(randomamplifiedpolymorphicDNA)analysis.Theresultsshowedthation-beamimplantationhadobviouseffectonalmostalloftheseparameters,andthevacuumtreatmenthadsomeimpactsonseveralmorphologicalparameterssuchastheboltingtimeandthelengthoftheprimarystem.Takingtheresultstogether,theindicationisthatvacuumtreatmenthassomeslightcontributionstothebioeffectsofion-beamimplantationwhileion-beambombardmentitselfisthemajorcreatorofthebioeffects.

简介：本文扼要介绍了光束线真空控制保护系统的设计思想、设计要求、系统的作用和某些改进。此外，系统在设计了上采用了新技术－可编程序控制器（PLC），使控制系统的可靠性和灵活性得到了进一步的提高。研制这个系统的主要目的是，当光束线上出现（由铍窗或波纹管等偶然破裂引起的）灾难性真空事故时，能够有效地保护北京正负电子对撞机中的大型超高真空装置－电子储存环的真空系统不会遭到这种灾难的破坏，使其安全运行。本光束线的真空控制保护系统于1996年投入试运行，于1998年年底通过院级鉴定和验收。

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简介：Anewrectangularpulsetriggergeneratorhasbeendevelopedwhichcangeneratetwo10kVpulseswitharisetimelessthan1ns,ajitterof0.2nsandawidthofabout10nsand40ns,respectively.Thisgeneratorusestwopolymer-foilswitchesand25ohmBlumleintransmissionlinescomposedoftwo-parallelstandardcoaxialcablesdischargingintotwo50ohmoutputcables.Thepulsewidthandthedelaybetweentwopulsescanbeadjustedbychangingthelengthofthecables.