简介：TheballmillingofFe-24MnandFe-24Mn-6Simixedpowdershasbeenperformedbythehighenergyballmillingtechnique.ByemployingX-raydiffractionandMoessbauermeasurements.Theccmpositionevolutionduringthemillingprocesshasbeeninvestigated.TheresultsindicatetheformationofparamagneticFe-MnorFe-Mn-Sialloyswithametastablefccphaseasfinalproducts.whichimplythattheFeandMnproceedaco-diffusionmeenanismthroughthesurfaceoffragmentedpowders.Thethermalstabilityandcompositionevolutionoftheas-milledalloyswerediscussedcomparingwiththebulkalloy,.

简介：TherearetwotpyesofphasetransformationsinFe-MnandFe-Mn-Sialloyswhenthetemperatureisdecreased,γ(fcc)→ε(hcp)martensitictransformation(MT)andparamagnetic-antiferromagnetictransition(AMT)ofγphase.Fromthethermodynamicpointofview,theformerusuallyappearsinaslightlyhighertemperaturerangethanthelatterbecauseifisgenerallyacceptedthatthemagnetictansitionhasasuppressingeffectonthethermallyinducedεmartensite(Satoetal.,1984.,BogachevandZvigintzeva,1976;Murakamietal.,1987:Yangetal.,1992)GartsteinandRobinkin(1979)eventhoughtthattheγ-εtransformationshouldbeterminatedbelowNeeltemperature(TN)duetothedecreaseoffreeenergyarisingfromtheAMTofγphase.However,someexperimentalresultshaeindicatedtheformationofεphasebelowT(LiandWayman,1994:Fujimori.1966).Inthepresentwert.thebehavorofγ-εtransformationbelowTNwasfurtherinvestigatedbyclectricalresistancemeasurements.

简介：本文利用XAFS方法研究机械合金化方法制备的Fe100-xCux(x=0,10,20,40,60,70,80,100,x为原子百分比）合金中Fe、Cu原子的局域环境结构随组成的变化。对于Fe100-xCux二元混合物，当x≥40时，Fe原子的近邻配位结构从bcc转变为fcc，但Cu原子的近邻结构保持其fcc不变；与之相反，当x≤20时，Fe原子的近邻配位保持bcc结构而Cu原子的近邻配位结构从fcc转变为bcc结构。XAFS结果还表明fcc结构的Fe100-xCux中Fe的无序因子σ（0．009A）比bcc结构的Fe100-xCux中的σ（0．081A）大得多；并且在同一机械合金化Fe100-xCux（x≥40）样品中Fe原子的σ（0．099A）比Cu原子的σ（0．089A）大。这表明机械合金化的Fe100-xCux样品中Fe和Cu原子可以有相同的局域结构环境但不是均匀的过饱和固溶体，而是fcc或bcc合金相同时存在Fe富集区和Cu富集区。

简介：采用EXAFS详细研究了系列Ni-Co-B非晶态合金催化剂的结构，结果表明：非晶态Ni-Co-B合金中的金属和非金属之间是一种共价化学键，Co的加入增加了Ni-B非晶态合金的无序度，而B含量的变化对Co-B、Ni-B配位有不同的影响，当样品中Ni、Co含量相同时，存在着协同作用。

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简介：Amethodbasedupontheweightedtotalcrosssection(WTCS)theoryisproposedtocalculatethephoto-ionisationcrosssectionsandtheradiativerecombinationratecoefficientsbetweenthefundamentallevelofCOandthemainelectronicstatesofitscorrespondingion.Totalphoto-ionisationcrosssectionsandradiativerecombinationratecoefficientsaredeterminedfromthecalculationofelementaryvibrationalphoto-ionisationcrosssections.TransitionsbetweenCO~+(X,AandB)andCO(X)areconsidered.Totalphoto-ionisationcrosssectionsandrecombinationcoefficientsarecomputedinthetemperatureinterval500-15000K.

简介：Geepilayersofdifferentthicknessesaregrownbymolecular-beamepitaxywithSbasasurfactantonSI(100)substrates,X-raydiffractionillustratesthattheseGethinfilmsarepartiallystrained.andthestrainsdecreasegraduallywithincreasingepilayerthickness,RamanspectrarevealadownwardshiftoftheGe-Gemodepeakastheepilayerthicknessincreases.Intheregionsofhighstrain,therelationshipbetweentheRamanshiftofthismodeandthestraininthepartiallyrelaxedsamplesisconsiderablydifferentfromthelinearrelationshipreportedbefore,whichismainlyattributedtothespatialconfinementeffectofphononsinananocrystal.

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简介：本文采用溶胶-凝胶法，获得了铁掺杂的纳米TiO2样品，XRD和透射电镜测量表明在600℃以下焙烧时为锐钛矿，颗粒度在10nm以下，样品在1000℃下焙烧时，转变为金红石相，颖粒度增大。EXAPS和穆谱表明，铁的确掺杂到TiO2晶格内，表现为3价。铁的掺杂改变了纯的TiO2的性质，对于锐铁矿相的掺铁纳米TiO2，其紫外-可见反射光谱给出在481nm处出观了新的吸收峰，；对于以金红石相为主的掺铁纳米TiO2，其紫外-可见反射光谱在512nm处出现了新的吸收峰。

简介：通过水热法合成了骨架含铁的杂原子丝光沸石，采用XRD，FT－IR及TPR等表征技术确认铁进入了分子筛骨架。利用XAFS技术对分子筛中铁的精细结构和配位环境进行了表征和计算，近边吸收的Fe-K边前跃迁证实铁在分子筛骨架中位于四面体配位环境中，与邻近原子存在共价键作用；铁－氧配位键长为0.188-0.189nm.

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简介：Amorphoussilicon(a-Si),nanocrystallinesilicon(nc-Si)andhydrogenatednanocrys-tallinesilicon(nc-Si:H)filmswerefabricatedbyusingchemicalvapordeposition(CVD)system.Thea-Siandnc-Sithinfilmswereirradiatedwith94MeVXe-ionsatfluencesof1.0×1011ions/cm-2,1.0×1012ions/cm-2and1.0×1013ions/cm-2atroomtemperature(RT).Thenc-Si:Hfilmswereirradiatedwith9MeVXe-ionsat1.0×1012Xe/cm-2,1.0×1013Xe/cm-2and1.0×1014Xe/cm-2atRT.Forcomparison,mono-crystallinesilicon(c-Si)sampleswerealsoirradiatedatRTwith94MeVXe-ions.AllsampleswereanalyzedbyusinganUV/VIS/NIRspectrometerandanX-raypowderdiffractometer.Variationsoftheopticalband-gap(Eg)andgrainsize(D)versustheirradiationfluencewereinvestigatedsystematically.Theobtainedresultsshowedthattheopticalband-gapsandgrainsizeofthethinfilmschangeddramaticallywhereasnoobservablechangewasfoundinc-SisamplesafterXe-ionirradiation.Possiblemechanismunderlyingthemodificationofsiliconthinfilmswasbrieflydiscussed.

简介：MoleculardynamicssimulationsareperformedtoinvestigateCF3continuouslybom-bardingtheamorphoussiliconsurfacewithenergiesof10eV,50eV,100eVand150eVatnormalincidenceandroomtemperature.TheimprovedTersoff-Brennerpotentialswereused.Thesimu-lationresultsshowthatthesteady-stateetchingratesareabout0.019,0.085and0.1701for50eV,100eVand150eV,respectively.Withincreasingincidentenergy,atransitionfromC-richsurfacetoF-richsurfaceisobserved.IntheregionmodifiedbyCF3,SiFandCFspeciesaredominant.

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简介：用X射线摇摆曲线和掠入射衍射、透射电镜、原子力显微镜等实验技术研究了MBE方法生长的Si缓冲层生长温度对SiGe／Si异质结结构的影响。结果表明，所研究的SiGe外延层晶格发生完全弛豫，但表面粗糙度和界面失配位错随Si缓冲层的生长温度而变化，最佳生长温度为450℃；缓冲层晶格应变是达到高质量SiGe外延层的主要原因。

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