简介：Surfacemodificationofpolypropylenemembranebyargon(Ar)plasma-inducedgraftpolymerizationwithhydrophilicn,onomer[acrylicacid(AA)inthiswork]wasinvestigated.ItwasfoundthatboththedistanceofthemembranefromtheArplasmacenterandtheplasmapowerhadastronginfluenceonthesurfacemodification,hydrophilicityandgraftyield(GY)ofthetreatedmembrane.Resultssuggestthatremoteplasmatreatmentwithapropersampleposition,plasmapowerandgraftpolymerizationleadstoamembranesurfacewithnotonlylessdamage,bntalsomorepermanenthydrophilicity,thandirectplasmatreatmentdoes.Byanalyzingthemorphologyandthechemicalcompositionofthemembranesurfacebyscanningelectronmicroscopy(SEM)andX-rayphotoelectronspectroscopy(XPS),aswellasFouriertransforminfraredattenuatedtotalreflectionspectroscopy(FTIR-ATR)respectively,apossiblemechanismwastentativelyrevealed.

简介：ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.