简介：Thisletterintroducesthedesignideas,simulationandtestresultsofanS-bandklystronwithbandwidthof11%,whichwasdevelopedbytheInstituteofElectronics,ChineseAcademyofSciences(IECAS).Onthepeakpowerlevelof800kW,theefficiencyofklystronismorethan30%;thegainismorethan41dB;theequal-drivingrelativeinstantaneousbandwidthisover11%;theaveragepowerislargerthan8kW,andthepowerfluctuationwithinbandwidthislessthan1.5dB.
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