简介:AmassofGaNnanowireshasbeensuccessfullysynthesizedonSi(111)substratesbymagnetronsputteringthroughammoniatingGa2O3/Cofilmsat950C.X-raydiffraction,scanningelectronmicroscopy,highresolutiontransmissionelectronmicroscopeandFouriertransformedinfraredspectraareusedtocharacterizethesamples.Theresultsdemonstratethatthenanowiresareofsingle-crystalGaNwithahexagonalwurtzitestructureandpossessrelativelysmoothsurfaces.ThegrowthmechanismofGaNnanowiresisalsodiscussed.更多还原