Thermal Characterization of 1.3μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on I-V Method-中国期刊网

摘要 AnexperimentalwayforthethermalcharacterizationofsemiconductorlasersbasedonI-Vmethodunderpulsedrivingconditionshasbeendeveloped,withwhichthethermalcharacteristicsofstraincompensated1.3μmInAsP/InGaAsPridgewaveguideMQWlaserchipshavebeeninvestigated.Theresultsshowthat,bymeasuringandanalyzingtheI-Vcharacteristicsunderappropriatepulsedrivingconditionsatdifferentheatsinktemperatures,thethermalresistanceofthelaserdiodescouldbeeasilydeduced.Thedrivingcurrentandjunctionvoltagewaveformsofthelaserchipsunderdifferentpulsedrivingconditionsarealsodiscussed.

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Thermal Characterization of 1.3μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on I-V Method

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Thermal Characterization of 1.3μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on I-V Method

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